参数资料
型号: M3060C-E3/4W
厂商: Vishay General Semiconductor
文件页数: 3/5页
文件大小: 144K
描述: DIODE SCHOTTKY 30A 60V TO-220AB
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 720mV @ 15A
电流 - 在 Vr 时反向漏电: 350µA @ 60V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 60V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
Document Number: 89009
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.0.1
0.3
0.5
0.7
8
Instantaneous Forward Voltage (V)
Instantaneo
u
s For
w
ard C
u
rrent (A)
TJ
= 150 °C
TJ
= 125 °C
TJ
= 25 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 6050 90 100
80
70
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse C
u
rrent (mA)
TJ
= 25 °C
TJ
= 125 °C
TJ
= 150 °C
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
J
u
nction Capaci
tance (pF)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
0.1
1
10
100
0.01 0.1 1 10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/
W
)
M(I)3060C
Junction to Case
0.1
1
10
100
0.01 0.1 101 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/
W
)
MF3060C
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