- 您现在的位置：买卖IC网 > PDF目录45022 > M30626FHPFP-U5 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP100 PDF资料下载
参数资料
| 型号： | M30626FHPFP-U5 |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP100 |
| 封装： | 14 X 20 MM, 0.65 MM PITCH, LEAD FREE, PLASTIC, QFP-100 |
| 文件页数： | 28/87页 |
| 文件大小： | 919K |
| 代理商： | M30626FHPFP-U5 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页当前第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页
M16C/62P Group (M16C/62P, M16C/62PT)
5. Electrical Characteristics (M16C/62P)
4
8
f
o
4
0
2
,
1
0
p
e
S
0
3
.
2
.
v
e
R
Z
0
3
2
0
-
1
0
B
3
0
J
E
R
page 34
Table 5.5 Flash Memory Version Electrical Characteristics (1) for 100 cycle products (D3, D5, U3, U5)
Min.Typ.
Max.
Word Program Time (VCC1=5.0V, Topr=25
°C)
Block Erase Time
(VCC1=5.0V, Topr=25
°C)
Erase All Unlocked Blocks Time (2)
Lock Bit Program Time
ParameterUnit
Standard
25
0.3
25
200
s
4 X n
Flash Memory Circuit Stabilization Wait Time
tPS
15
s
-
Symbol
NOTES :
1.
Referenced to VCC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60
°C unless otherwise specified.
2.
n denotes the number of block erases.
3.
Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this
counts as one program and erase endurance. Data cannot be written to the same address more than once without
erasing the block. (Rewrite prohibited)
4.
Maximum number of E/W cycles for which operation is guaranteed.
5.
Topr = -40 to 85
°C (D3, D7, U3, U7) / -20 to 85 °C (D5, D9, U5, U9).
6.
Referenced to VCC1 = 2.7 to 5.5V at Topr = -20 to 85
°C (D9, U9) / -40 to 85 °C (D7, U7) unless otherwise specified.
7.
Table 23.6 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 23.5.
8.
To reduce the number of program and erase endurance when working with systems requiring numerous rewrites,
write to unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are
used. For example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to
track the total number of times erasure is used.
9.
Should erase error occur during block erase, attempt to execute clear status register command, then block erase
command at least three times until erase error disappears.
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (D7, D9, U7
and U9).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Program and Erase Endurance (3)
-
100
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
Data Hold Time (5)
10
year
-
0.3
0.5
0.8
s
Min.Typ.
Max.
Word Program Time (VCC1=5.0V, Topr=25
°C)
Block Erase Time
(VCC1=5.0V, Topr=25
°C)
Lock Bit Program Time
Parameter
Unit
Standard
25
0.3
25
s
-
Symbol
Program and Erase Endurance (3, 8, 9)
-
10,000 (4)
4-Kbyte block
Flash Memory Circuit Stabilization Wait Time
tPS
s
Data Hold Time (5)
10
year
-
cycle
15
4
Table 5.7 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics (at
Topr = 0 to 60oC)
Flash Program, Erase Voltage
Flash Read Operation Voltage
VCC1 = 3.3 V ± 0.3 V or 5.0 V ± 0.5 V
VCC1=2.7 to 5.5 V
Table 5.6 Flash Memory Version Electrical Characteristics (6) for 10,000 cycle products (D7, D9,
U7, U7) (Block A and Block 1 (7))
相关PDF资料 |
PDF描述 |
|---|---|
| M30620FCPGP-U9 | 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP100 |
| M30624FGPFP-D9 | 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP100 |
| M306H2FCFP | 16-BIT, MROM, 10 MHz, MICROCONTROLLER, PQFP116 |
| M306H3MC-XXXFP | 16-BIT, MROM, 10 MHz, MICROCONTROLLER, PQFP116 |
| M306H3FCFP | 16-BIT, FLASH, 10 MHz, MICROCONTROLLER, PQFP116 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M30626FHPFPU5C | 制造商:Renesas Electronics Corporation 功能描述:General MC reference article 制造商:Renesas Electronics Corporation 功能描述:16bit MCU,384+4K FL,31K RAM,PQFP100 |
| M30626FHPGP | 制造商:Renesas Electronics Corporation 功能描述:Micro,M16C/62P,ROM 384k+4k FL, |
| M30626FHPGP#D3 | 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 384KB FLASH 3.3V/5V 100LQFP - Trays |
| M30626FHPGP#D3C | 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit M16C CISC 384KB Flash 3.3V/5V 100-Pin LQFP 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 384KB FLASH 3.3V/5V 100LQFP - Trays |
| M30626FHPGP#D5 | 制造商:Renesas Electronics Corporation 功能描述:M16C FLASH 384K/31K, 24MHZ,DMA,I2C,IEBUS - Trays |
发布紧急采购，3分钟左右您将得到回复。