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参数资料
| 型号： | M312L6523BTS-A2 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Registered Module |
| 中文描述： | DDR SDRAM的注册模块 |
| 文件页数： | 3/23页 |
| 文件大小： | 258K |
| 代理商： | M312L6523BTS-A2 |
DDR SDRAM
512MB, 1GB, 2GB TSOP Registered DIMM
Revison 1.0 December, 2003
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Ordering Information
Operating Frequencies
Part Number
Density
Organization
Component Composition
Heihgt
M383L6523BTS-CAA/A2/B0/A0
512MB
64M x 72
64Mx8( K4H510838B) * 9EA
1,700mil
M383L2923BTS-CAA/A2/B0/A0
1GB
128M x 72
64Mx8( K4H510838B) * 18EA
1,700mil
M383L2920BTS-CAA/A2/B0/A0
1GB
128M x 72
128Mx4( K4H510438B) * 18EA
1,700mil
M383L5628BT1-CAA/A2/B0/A0
2GB
256M x 72
st.256Mx4( K4H1G0638B) * 18EA
1,700mil
M312L6523BTS-CAA/A2/B0/A0
512MB
64M x 72
64Mx8( K4H510838B) * 9EA
1,200mil
M312L2923BTS-CAA/A2/B0/A0
1GB
128M x 72
64Mx8( K4H510838B) * 18EA
1,200mil
M312L2920BTS-CAA/A2/B0/A0
1GB
128M x 72
128Mx4( K4H510438B) * 18EA
1,200mil
M312L5628BT0-CAA/A2/B0/A0
2GB
256M x 72
st.256Mx4( K4H1G0638B) * 18EA
1,200mil
AA(DDR266@CL=2)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
A0(DDR200@CL=2)
Speed @CL2
133MHz
133MHz
100MHz
100MHz
Speed @CL2.5
133MHz
133MHz
133MHz
-
CL-tRCD-tRP
2-2-2
2-3-3
2.5-3-3
2-2-2
Feature
Power supply : Vdd: 2.5V
±
0.2V, Vddq: 2.5V
±
0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2, 2.5 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
1,700mil / 1,200mil height & double sided
184Pin Registered DIMM based on 512Mb B-die (x4, x8)
相关PDF资料 |
PDF描述 |
|---|---|
| M312L6523BTS-CAA | DDR SDRAM Registered Module |
| M312L5720BG0-A2 | DDR SDRAM Registered Module |
| M312L2923BG0-A2 | TVS UNIDIRECT 1500W 150V SMC |
| M312L2923BG0-B0 | TVS BIDIRECT 1500W 150V SMC |
| M312L2923BG0-CB3 | TVS 1500W 15V UNIDIRECT SMC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M312L6523BTS-CAA | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Registered Module |
| M312L6523CZ3-CB300 | 制造商:Samsung Semiconductor 功能描述:512MSDDDR_MDDR SDRAM MODULX72BOC(LF) - Bulk |
| M312L6523CZ3-CCC00 | 制造商:Samsung Semiconductor 功能描述:DRAM Module DDR SDRAM 512Mbyte 184RDIMM Tray |
| M312L6523DZ3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| M312-SERIES | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Peripheral IC |
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