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参数资料
| 型号： | M347S6453CTS-C1H |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| 中文描述： | M374S6453CTS PC133/PC100无缓冲SDRAM的内存 |
| 文件页数： | 5/11页 |
| 文件大小： | 165K |
| 代理商： | M347S6453CTS-C1H |
PC133/PC100 Unbuffered DIMM
M374S6453CTS
REV. 0.1 Sept. 2001
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-7C
-7A
-1H
-1L
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
1170
1080
1080
1080
mA
1
Precharge standby cur-
rent in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
36
mA
I
CC2
PS
36
Precharge standby cur-
rent in non power-down
mode
I
CC2
N
360
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
180
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
108
mA
I
CC3
PS
108
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
540
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
450
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4banks Activated.
t
CCD
= 2CLKs
1260
1260
1170
1170
mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
2250
2070
1980
1980
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
54
mA
L
27
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
Notes :
相关PDF资料 |
PDF描述 |
|---|---|
| M347S6453CTS-C1L | M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| M347S6453CTS-C7A | M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| M374S6453CTS-L7C | M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| M374S6453CTS | M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| M374S6453CTS-L7A | M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M347S6453CTS-C1L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| M347S6453CTS-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| M347S6453CTS-C7C | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| M347S6453CTS-L1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
| M347S6453CTS-L1L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM |
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