参数资料
型号: M347S6453CTS-C7A
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
中文描述: M374S6453CTS PC133/PC100无缓冲SDRAM的内存
文件页数: 7/11页
文件大小: 165K
代理商: M347S6453CTS-C7A
PC133/PC100 Unbuffered DIMM
M374S6453CTS
REV. 0.1 Sept. 2001
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
Symbol
-7C
-7A
-1H
-1L
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
7.5
1000
7.5
1000
10
1000
10
1000
ns
1
CAS latency=2
7.5
10
10
12
CLK to valid
output delay
CAS latency=3
t
SAC
5.4
5.4
6
6
ns
1,2
CAS latency=2
5.4
6
6
7
Output data
hold time
CAS latency=3
t
OH
3
3
3
3
ns
2
CAS latency=2
3
3
3
3
CLK high pulse width
t
CH
2.5
2.5
3
3
ns
3
CLK low pulse width
t
CL
2.5
2.5
3
3
ns
3
Input setup time
t
SS
1.5
1.5
2
2
ns
3
Input hold time
t
SH
0.8
0.8
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
5.4
5.4
6
6
ns
CAS latency=2
5.4
6
6
7
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
相关PDF资料
PDF描述
M374S6453CTS-L7C M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS-L7A M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M347S6453CTS-L1H M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M347S6453CTS-L1L M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
相关代理商/技术参数
参数描述
M347S6453CTS-C7C 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M347S6453CTS-L1H 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M347S6453CTS-L1L 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
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