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参数资料
| 型号： | M366S1623DT0-C75 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | PC133 Unbuffered DIMM |
| 中文描述： | PC133的无缓冲DIMM |
| 文件页数： | 1/10页 |
| 文件大小： | 154K |
| 代理商： | M366S1623DT0-C75 |
PC133 Unbuffered DIMM
M366S1623DT0
REV. 0.2 July, 2000
Revision History
Revision 0.0 (June, 1999)
PC133 first published.
Revision 0.1 (May, 2000)
Changed tOH parameter from 2.7ns to 3.0ns
Revision 0.2 (July, 2000)
Added PC100@CL3 data on
DC Characteristics, Operating AC Parameter, AC Characteristics.
相关PDF资料 |
PDF描述 |
|---|---|
| M366S1623DT0-C7A | PC133 Unbuffered DIMM |
| M366S1623DT0 | PC100 Unbuffered DIMM |
| M366S1623DT0-C1H | PC100 Unbuffered DIMM |
| M366S1623DT0-C1L | PC100 Unbuffered DIMM |
| M366S1623DT0-C80 | PC100 Unbuffered DIMM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M366S1623DT0-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133 Unbuffered DIMM |
| M366S1623DT0-C80 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM |
| M366S1623ET0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S1654CTS | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S1654CTS-C1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
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