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参数资料
| 型号： | M366S1623DT0 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | PC100 Unbuffered DIMM |
| 中文描述： | PC100的无缓冲DIMM |
| 文件页数： | 4/9页 |
| 文件大小： | 136K |
| 代理商： | M366S1623DT0 |
M366S1623DT0
PC100 Unbuffered DIMM
Rev. 0.0 Jun. 1999
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
16
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
= 1.4V
±
200
mV)
Pin
Symbol
Min
Max
Unit
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0~CS3)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
C
ADD
C
IN
C
CKE
C
CLK
C
CS
C
DQM
C
OUT
45
45
25
15
15
10
13
85
85
45
21
25
15
18
pF
pF
pF
pF
pF
pF
pF
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
Input logic high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note :
相关PDF资料 |
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|---|---|
| M366S1623DT0-C1H | PC100 Unbuffered DIMM |
| M366S1623DT0-C1L | PC100 Unbuffered DIMM |
| M366S1623DT0-C80 | PC100 Unbuffered DIMM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M366S1623DT0-C1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM |
| M366S1623DT0-C1L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM |
| M366S1623DT0-C1L00 | 制造商:Samsung SDI 功能描述:16M X 64 SDRAM DIMM based on 8M X 8, 4banks, 4K refresh, 3.3V synchronous drams with spd |
| M366S1623DT0-C75 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133 Unbuffered DIMM |
| M366S1623DT0-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133 Unbuffered DIMM |
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