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参数资料
| 型号： | M366S3323DTS |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 32Mx64 SDRAM的内存在16Mx8，4Banks，4K的刷新，3.3社民党基于同步DRAM |
| 文件页数： | 11/11页 |
| 文件大小： | 124K |
| 代理商： | M366S3323DTS |
M366S3323DTS
PC133/PC100 Unbuffered DIMM
Rev. 0.1 Sept. 2001
Byte #
Function Described
Function Supported
Hex value
Note
-7C
-7A
-1H
-1L
-7C
-7A
-1H
-1L
35
Data signal input hold time
0.8ns
0.8ns
1ns
1ns
08h
08h
10h
10h
36~61
Superset information (maybe used in future)
-
00h
62
SPD data revision code
Intel Rev 1.2B
12h
63
Checksum for bytes 0 ~ 62
-
6Fh
B0h
17h
47h
64
Manufacturer JEDEC ID code
Samsung
CEh
65~71
...... Manufacturer JEDEC ID code
Samsung
00h
72
Manufacturing location
Onyang Korea
01h
73
Manufacturer part # (Memory module)
M
4Dh
74
Manufacturer part # (DIMM Configuration)
3
33h
75
Manufacturer part # (Data bits)
Blank
20h
76
...... Manufacturer part # (Data bits)
6
36h
77
...... Manufacturer part # (Data bits)
6
36h
78
Manufacturer part # (Mode & operating voltage)
S
53h
79
Manufacturer part # (Module depth)
3
33h
80
...... Manufacturer part # (Module depth)
3
33h
81
Manufacturer part # (Refresh, #of banks in Comp. & Interface)
2
32h
82
Manufacturer part # (Composition component)
3
33h
83
Manufacturer part # (Component revision)
D
44h
84
Manufacturer part # (Package type)
T
54h
85
Manufacturer part # (PCB revision & type)
S
53h
86
Manufacturer part # (Hyphen)
" - "
2Dh
87
Manufacturer part # (Power)
L/C
4Ch/43h
88
Manufacturer part # (Minimum cycle time)
7
7
1
1
37h
37h
31h
31h
89
Manufacturer part # (Minimum cycle time)
C
A
H
L
43h
41h
48h
4Ch
90
Manufacturer part # (TBD)
Blank
20h
91
Manufacturer revision code (For PCB)
S
53h
92
...... Manufacturer revision code (For component)
D-die (5th Gen.)
44h
93
Manufacturing date (Year)
-
-
3
94
Manufacturing date (Week)
-
-
3
95~98
Assembly serial #
-
-
4
99~125
Manufacturer specific data (may be used in future)
Undefined
-
126
System frequency for 100MHz
100MHz
64h
127
PC100 specification details
Detailed PC100 Information
FFh
FFh
FFh
FDh
128+
Unused storage locations
Undefined
-
1. The row select address is excluded in counting the total # of addresses.
2. This value is based on the component specification.
3. These bytes are programmed by code of Date Week & Date Year with BCD format.
4. These bytes are programmed by Samsung
′
s own Assembly Serial # system. All modules may have different unique serial #.
Note :
相关PDF资料 |
PDF描述 |
|---|---|
| M366S3323DTS-C1H | 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323DTS-C1L | 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323DTS-C7A | 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323DTS-C7C | 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323DTS-L1H | 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M366S3323DTS-C1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323DTS-C1L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323DTS-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323DTS-C7C | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323DTS-L1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
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