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参数资料
| 型号： | M374S2953BTS-C7A |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC |
| 中文描述： | 内存缓冲模块168线缓冲模块基于512Mb乙芯片62/72-bit非ECC / ECC的 |
| 文件页数： | 12/22页 |
| 文件大小： | 379K |
| 代理商： | M374S2953BTS-C7A |
256MB, 512MB, 1GB Unbuffered DIMM
DC CHARACTERISTICS
M366S3354BTS (32M x 64,256MB Module)
Rev. 1.1 February 2004
SDRAM
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
400
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
8
8
mA
Precharge standby current
in non power-down mode
I
CC2
N
80
mA
I
CC2
NS
40
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
25
25
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
120
mA
I
CC3
NS
100
mA
Operating current
(Burst mode)
I
CC4
520
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
800
12
mA
mA
2
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
720
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
16
16
mA
Precharge standby current
in non power-down mode
I
CC2
N
160
mA
I
CC2
NS
80
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
50
50
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
240
mA
I
CC3
NS
200
mA
Operating current
(Burst mode)
I
CC4
800
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
1,600
24
mA
mA
2
M366S6553BTS (64M x 64, 512MB Module)
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M374S3253ETS-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
| M374S3253ETU-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
| M374S3323ETS-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
| M374S3323ETU-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
| M374S3323FTS-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
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