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参数资料
| 型号： | M374S6553BTS-C7A |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC |
| 中文描述： | 内存缓冲模块168线缓冲模块基于512Mb乙芯片62/72-bit非ECC / ECC的 |
| 文件页数： | 16/22页 |
| 文件大小： | 379K |
| 代理商： | M374S6553BTS-C7A |
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 1.1 February 2004
SDRAM
Ordering Information
Operating Frequencies
Part Number
Density
Organization
Component Composition
Component
Package
Height
M366S3354BTS-C7A
256MB
32M x 64
32Mx16(K4S511632B) * 4EA
54-TSOP(II)
1,000mil
M366S6553BTS-C7A
512MB
64M x 64
64Mx8(K4S510832B) * 8EA
1,375mil
M374S6553BTS-C7A
512MB
64M x 72
64Mx8(K4S510832B) * 9EA
1,375mil
M366S2953BTS-C7A
1GB
128M x 64
64Mx8(K4S510832B)*16EA
1,375mil
M374S2953BTS-C7A
1GB
128M x 72
64Mx8(K4S510832B)*18EA
1,375mil
7A
@CL3
@CL2
Maximum Clock Frequency
133MHz(7.5ns)
100MHz(10ns)
CL-tRCD-tRP(clock)
3 - 3 - 3
2 - 2 - 2
Feature
Burst mode operation
Auto & self refresh capability (8192 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
± 0.3V power supply
MRS cycle with address key programs Latency (Access from column address)
Burst length (1, 2, 4, 8)
Data scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock
Serial presence detect with EEPROM
168Pin Unbuffered DIMM based on 512Mb B-die (x8, x16)
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