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参数资料
| 型号： | M38039FFFP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 16.8 MHz, MICROCONTROLLER, PQFP64 |
| 封装： | 14 X 14 MM, 0.80 MM PITCH, PLASTIC, QFP-64 |
| 文件页数： | 16/136页 |
| 文件大小： | 2007K |
| 代理商： | M38039FFFP |
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112
3803/3804 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
q Program command
When “4016” is written to the flash command register, the 3803/
3804 group enters the program mode.
Subsequently to this, if the instruction (for instance, STA or LDM
instruction) for writing byte data in the address to be programmed
is executed, the control circuit of the flash memory executes the
program. The erase/program busy flag of the flash memory control
register is set to “1” when the program starts, and becomes “0"
when the program is completed. Accordingly, after the write in-
struction is executed, CPU can recognize the completion of the
program by polling this bit.
The programmed area must be specified beforehand by the erase/
program area select bits.
During programming, watchdog timer stops with “FFFF16” set.
Note: A programming operation is not completed by executing the
program command once. Always be sure to execute a pro-
gram verify command after executing the program command.
When the failure is found in this verification, the user must re-
peatedly execute the program command until the pass. Refer
to Figure 104 for the flow chart of the programming.
q Program verify command
When “C016" is written to the flash command register, the 3803/
3804 group enters the program verify mode. Subsequently to this,
if the instruction (for instance, LDA instruction) for reading byte
data from the address to be verified (i.e., previously programmed
address), the contents which has been written to the address ac-
tually is read.
CPU compares this read data with data which has been written by
the previous program command. In consequence of the compari-
son, if not agreeing, the operation of “program
→ program verify”
must be executed again.
q Erase command
When writing “2016” twice continuously to the flash command reg-
ister, the flash memory control circuit performs erase to the area
specified beforehand by the erase/program area select bits.
Erase/program busy flag of the flash memory control register be-
comes “1” when erase begins, and it becomes “0" when erase
completes. Accordingly, CPU can recognize the completion of
erase by polling this bit.
Data “0016” must be written to all areas to be erased by the pro-
gram and the program verify commands before the erase
command is executed.
During erasing, watchdog timer stops with “FFFF16” set.
Note: The erasing operation is not completed by executing the erase
command once. Always be sure to execute an erase verify
command after executing the erase command. When the fail-
ure is found in this verification, the user must repeatedly ex-
ecute the erase command until the pass. Refer to Figure 104
for the erasing flowchart.
q Erase verify command
When “A016" is written to the flash command register, the 3803/
3804 group enters the erase verify mode. Subsequently to this, if
the instruction (for instance, LDA instruction) for reading byte data
from the address to be verified, the contents of the address is
read.
CPU must erase and verify to all erased areas in a unit of ad-
dress.
If the address of which data is not “FF16” (i.e., data is not erased)
is found, it is necessary to discontinue erasure verification there,
and execute the operation of “erase
→ erase verify” again.
Note: By executing the operation of “erase
→ erase verify” again
when the memory not erased is found. It is unnecessary to
write data “0016” before erasing in this case.
q Reset command
The reset command is a command to discontinue the program or
erase command on the way. When “FF16” is written to the command
register two times continuously after “4016” or “2016” is written to the
flash command register, the program, or erase command becomes
invalid (reset), and the 3803/3804 group enters the reset mode.
The contents of the memory does not change even if the reset com-
mand is executed.
DC Electric Characteristics
Note: The characteristic concerning the flash memory part are the
same as the characteristic of the parallel I/O mode.
AC Electric Characteristics
Note: The characteristics are the same as the characteristic of the
microcomputer mode.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M38039FFHFP#U0 | 功能描述:IC 740 MCU FLASH 60K 64QFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:740/38000 产品培训模块:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 标准包装:1 系列:M16C™ M32C/80/87 核心处理器:M32C/80 芯体尺寸:16/32-位 速度:32MHz 连通性:EBI/EMI，I²C，IEBus，IrDA，SIO，UART/USART 外围设备:DMA，POR，PWM，WDT 输入/输出数:121 程序存储器容量:384KB（384K x 8） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:24K x 8 电压 - 电源 (Vcc/Vdd):3 V ~ 5.5 V 数据转换器:A/D 34x10b，D/A 2x8b 振荡器型:内部 工作温度:-20°C ~ 85°C 封装/外壳:144-LQFP 包装:托盘 产品目录页面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87 |
| M38039FFHHP | 功能描述:MCU 3/5V 56K+4K 64-LQFP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:740/38000 标准包装:250 系列:56F8xxx 核心处理器:56800E 芯体尺寸:16-位 速度:60MHz 连通性:CAN，SCI，SPI 外围设备:POR，PWM，温度传感器，WDT 输入/输出数:21 程序存储器容量:40KB（20K x 16） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:6K x 16 电压 - 电源 (Vcc/Vdd):2.25 V ~ 3.6 V 数据转换器:A/D 6x12b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:48-LQFP 包装:托盘 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323 |
| M38039FFH-HP#U | 制造商:Renesas Electronics Corporation 功能描述:8BIT 740 CISC 56KB FLASH 16.8MHZ 3.3/5V - Trays |
| M38039FFHHP#U0 | 功能描述:MCU 3/5V 56K+4K PB-FREE 64-LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:740/38000 标准包装:250 系列:56F8xxx 核心处理器:56800E 芯体尺寸:16-位 速度:60MHz 连通性:CAN，SCI，SPI 外围设备:POR，PWM，温度传感器，WDT 输入/输出数:21 程序存储器容量:40KB（20K x 16） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:6K x 16 电压 - 电源 (Vcc/Vdd):2.25 V ~ 3.6 V 数据转换器:A/D 6x12b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:48-LQFP 包装:托盘 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323 |
| M38039FFHKP#U0 | 制造商:Renesas Electronics Corporation 功能描述:MCU 3/5V 56K+4K PB-FREE 64-LQFP - Trays |
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