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参数资料
| 型号： | M41000000H |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同时作业闪存和8兆位（1 M中的x 8-Bit/512亩x 16位），静态存储器 |
| 文件页数： | 2/63页 |
| 文件大小： | 573K |
| 代理商： | M41000000H |
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PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
25560
Issue Date:
August 19, 2002
Rev:
B
Amendment/
+0
Am41DL6408G
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
Power supply voltage of 2.7 to 3.3 volt
■
■
High performance
— Access time as fast as 70 ns Flash/55 ns SRAM
Package
— 73-Ball FBGA
Operating Temperature
— –40°C to +85°C
■
■
Flash Memory Features
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■
Flexible Bank
architecture
— Read may occur in any of the three banks not being written
or erased.
— Four banks may be grouped by customer to achieve desired
bank divisions.
■
Manufactured on 0.17 μm process technology
SecSi (Secured Silicon) Sector: Extra 256 Byte sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for
factory-secured data
—
Customer lockable:
Sector is one-time programmable. Once
sector is locked, data cannot be changed.
■
Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
■
Boot sectors
— Top and bottom boot sectors in the same device
■
Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
■
■
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast as 70 ns
— Program time: 4 μs/word typical utilizing Accelerate function
■
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■
■
Minimum 1 million write cycles guaranteed per sector
20 year data retention at 125
°
C
— Reliable operation for the life of the system
■
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■
Supports Common Flash Memory Interface (CFI)
■
■
Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow
programming/erasing in same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
■
■
HARDWARE FEATURES
Any combination of sectors can be erased
■
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
the read mode
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1, 140, and
141, regardless of sector protect status
— Acceleration (ACC) function accelerates program timing
Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
■
■
■
SRAM Features
Power dissipation
— Operating: 30 mA maximum
— Standby: 15μA maximum
■
CE1s# and CE2s Chip Select
Power down features using CE1s# and CE2s
Data retention supply voltage: 1.5 to 3.3 volt
Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
■
■
■
■
相关PDF资料 |
PDF描述 |
|---|---|
| M410000087 | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| M41000001W | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001X | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001Y | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001Z | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M41000001W | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001X | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001Y | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000001Z | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000020 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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