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| 型号： | M41000001Z |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | 32兆位（4个M × 8位/ 2米x 16位），3.0伏的CMOS只，同时作业闪存和4兆位（512亩x 8-Bit/256亩x 16位），静态存储器 |
| 文件页数： | 33/65页 |
| 文件大小： | 582K |
| 代理商： | M41000001Z |
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32
Am41DL32x4G
November 12, 2001
P R E L I M I N A R Y
Table 15.
Command Definitions (Flash Word Mode)
Legend:
X = Don
’
t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE#f pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE#f pulse, whichever happens first.
SADD = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20
–
A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased.
Notes:
1.
2.
3.
See Table 1 for description of bus operations.
All values are in hexadecimal.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
Data bits DQ15
–
DQ8 are don
’
t care in command sequences,
except for RD and PD.
Unless otherwise noted, address bits A20
–
A12 are don
’
t cares.
No unlock or command cycles required when bank is in read
mode.
The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information).
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or SecSi Sector factory protect
information. See the Autoselect Command Sequence section for
more information.
The data is 80h for factory locked and 00h for not factory locked.
10. The data is 00h for an unprotected sector/sector block and 01h
for a protected sector/sector block.
4.
5.
6.
7.
8.
9.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
14. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
15. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Table 16.
Autoselect Device IDs (Word Mode)
T = Top Boot Sector, B = Bottom Boot Sector
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2
–
5)
Third
Addr
Data
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
555
Data
RD
F0
AA
AA
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
Reset (Note 7)
Manufacturer ID
Device ID
SecSi Sector Factory
Protect (Note 9)
1
1
4
4
A
Enter SecSi Sector Region
Exit SecSi Sector Region
Program
Unlock Bypass
Unlock Bypass Program
(Note 11)
Unlock Bypass Reset (Note 12)
Chip Erase
Sector Erase
Erase Suspend (Note 13)
Erase Resume (Note 14)
CFI Query (Note 15)
2AA
2AA
55
55
(BA)555
(BA)555
90
90
(BA)X00
(BA)X01 see Table 16
0001
4
555
AA
2AA
55
(BA)555
90
(BA)X03
0082/0002
Sector Protect Verify
(Note 10)
4
555
AA
2AA
55
(BA)555
90
(SADD)
X02
0000/0001
3
4
4
3
555
555
555
555
AA
AA
AA
AA
2AA
2AA
2AA
2AA
55
55
55
55
555
555
555
555
88
90
A0
20
XXX
PA
00
PD
2
XXX
A0
PA
PD
2
6
6
1
1
1
BA
555
555
BA
BA
55
90
AA
AA
B0
30
98
XXX
2AA
2AA
00
55
55
555
555
80
80
555
555
AA
AA
2AA
2AA
55
55
555
SADD
10
30
Device
Am29DL322G
Am29DL323G
Am29DL324G
Autoselect Device ID
2255h (T), 2256h (B)
2250h (T), 2253h (B)
225Ch (T), 225Fh (B)
相关PDF资料 |
PDF描述 |
|---|---|
| M410000020 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000021 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000022 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000023 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000024 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M410000020 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000021 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000022 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000023 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000024 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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