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| 型号： | M410000023 |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | 32兆位（4个M × 8位/ 2米x 16位），3.0伏的CMOS只，同时作业闪存和4兆位（512亩x 8-Bit/256亩x 16位），静态存储器 |
| 文件页数： | 4/65页 |
| 文件大小： | 582K |
| 代理商： | M410000023 |
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November 12, 2001
Am41DL32x4G
3
P R E L I M I N A R Y
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .5
MCP Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . 5
Flash Memory Block Diagram. . . . . . . . . . . . . . . . 6
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . .7
Special Handling Instructions for FBGA Package ....................7
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations—Flash Word Mode, CIOf = V
;
SRAM Word Mode, CIOs = V
CC
..................................................... 11
Table 2. Device Bus Operations—Flash Word Mode, CIOf = V
IH
;
SRAM Byte Mode, CIOs = V
SS
......................................................12
Table 3. Device Bus Operations—Flash Byte Mode, CIOf = V
SS
;
SRAM Word Mode, CIOs = V
.....................................................13
Table 4. Device Bus Operations—Flash Byte Mode, CIOf = V
IL
; SRAM
Byte Mode, CIOs = V
SS
..................................................................14
Word/Byte Configuration ........................................................15
Requirements for Reading Array Data ...................................15
Writing Commands/Command Sequences ............................15
Accelerated ProgramOperation ..........................................15
Autoselect Functions ...........................................................15
Simultaneous Read/Write Operations with Zero Latency .......15
Standby Mode ........................................................................ 16
Automatic Sleep Mode ...........................................................16
RESET#: Hardware Reset Pin ...............................................16
Output Disable Mode ..............................................................16
Table 5. Device Bank Division ........................................................16
Table 6. Top Boot Sector Addresses .............................................17
Top Boot SecSi
Sector Addresses............................................. 18
BottomBoot SecSi
Sector Addresses........................................ 20
Autoselect Mode .....................................................................21
Sector/Sector Block Protection and Unprotection ..................21
Table 10. Top Boot Sector/Sector Block Addresses
forProtection/Unprotection .............................................................21
Write Protect (WP#) ................................................................21
Temporary Sector/Sector Block Unprotect .............................22
Figure 1. Temporary Sector Unprotect Operation........................... 22
Figure 2. In-SystemSector/Sector Block Protect and Unprotect Algo-
rithms.............................................................................................. 23
SecSi (Secured Silicon) Sector Flash Memory Region ..........24
Factory Locked: SecSi Sector Programmed and Protected At
the Factory ..........................................................................24
Customer Lockable: SecSi Sector NOT Programmed or Pro-
tected At the Factory ...........................................................24
Hardware Data Protection ......................................................24
Low V
CC
Write Inhibit ...........................................................24
Write Pulse
“
Glitch
”
Protection ............................................24
Logical Inhibit ......................................................................25
Power-Up Write Inhibit .........................................................25
Common Flash Memory Interface (CFI) . . . . . . .25
Table 11. CFI Query Identification String........................................ 25
SystemInterface String................................................................... 26
Table 13. Device Geometry Definition............................................ 26
Table 14. Primary Vendor-Specific Extended Query...................... 27
Command Definitions . . . . . . . . . . . . . . . . . . . . . .28
Reading Array Data ................................................................28
Reset Command .....................................................................28
Autoselect Command Sequence ............................................28
Enter SecSi Sector/Exit SecSi Sector Command Sequence ..29
Byte/Word ProgramCommand Sequence .............................29
Unlock Bypass Command Sequence ..................................29
Figure 3. ProgramOperation......................................................... 30
Chip Erase Command Sequence ...........................................30
Sector Erase Command Sequence ........................................30
Erase Suspend/Erase Resume Commands ...........................31
Figure 4. Erase Operation.............................................................. 31
Table 15. Command Definitions (Flash Word Mode)...................... 32
Table 16. Autoselect Device IDs (Word Mode) .............................. 32
Table 17. Command Definitions (Flash Byte Mode)....................... 33
Table 18. Autoselect Device IDs (Byte Mode) ...............................33
Write Operation Status . . . . . . . . . . . . . . . . . . . . 34
DQ7: Data#Polling .................................................................34
Figure 5. Data#Polling Algorithm.................................................. 34
RY/BY# Ready/Busy#............................................................35
DQ6: Toggle Bit I ....................................................................35
Figure 6. Toggle Bit Algorithm........................................................ 35
DQ2: Toggle Bit II ...................................................................36
Reading Toggle Bits DQ6/DQ2 ...............................................36
DQ5: Exceeded Timng Limts ................................................36
DQ3: Sector Erase Timer .......................................................36
Table 19. Write Operation Status ...................................................37
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 38
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 38
Industrial (I) Devices ............................................................38
V
CC
f/V
CC
s Supply Voltage ...................................................38
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39
CMOS Compatible ..................................................................39
SRAM DC and Operating Characteristics . . . . . 40
Zero-Power Flash .................................................................41
Figure 9. I
CC1
Current vs. Time (Showing Active and Automatic Sleep
Currents)........................................................................................ 41
Figure 10. Typical I
vs. Frequency............................................ 41
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 11. Test Setup.................................................................... 42
Table 20. Test Specifications .........................................................42
Key To Switching Waveforms . . . . . . . . . . . . . . . 42
Figure 12. Input Waveforms and Measurement Levels................. 42
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 43
SRAMCE#s Timng ................................................................43
Figure 13. Timng Diagramfor Alternating Between SRAM to Flash..
43
Flash Read-Only Operations .................................................44
Figure 14. Read Operation Timngs............................................... 44
Hardware Reset (RESET#) ....................................................45
Figure 15. Reset Timngs............................................................... 45
Flash Word/Byte Configuration (CIOf) ....................................46
Figure 16. CIOf Timngs for Read Operations................................ 46
Figure 17. CIOf Timngs for Write Operations................................ 46
Flash Erase and ProgramOperations ....................................47
Figure 18. ProgramOperation Timngs.......................................... 48
Figure 19. Accelerated ProgramTimng Diagram.......................... 48
Figure 20. Chip/Sector Erase Operation Timngs.......................... 49
Figure 21. Back-to-back Read/Write Cycle Timngs...................... 50
Figure 22. Data#Polling Timngs (During Embedded Algorithms). 50
Figure 23. Toggle Bit Timngs (During Embedded Algorithms)...... 51
相关PDF资料 |
PDF描述 |
|---|---|
| M410000024 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000025 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000026 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000027 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000002P | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M410000024 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000025 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000026 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M410000027 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| M41000002L | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
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