参数资料
型号: M41ST87WMX6TR
厂商: STMICROELECTRONICS
元件分类: 时钟/数据恢复及定时提取
英文描述: 1 TIMER(S), REAL TIME CLOCK, PDSO28
封装: 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOX-28
文件页数: 9/48页
文件大小: 457K
代理商: M41ST87WMX6TR
M41ST87Y, M41ST87W
Operating modes
power input is switched from the VCC pin to the battery, and the clock registers and external
SRAM are maintained from the attached battery supply.
All outputs become high impedance. The VOUT pin is capable of supplying 100A (for
M41ST87W) or 150A (for M41ST87Y) of current to the attached memory with less than 0.3
volts drop under this condition. On power up, when VCC returns to a nominal value, write
protection continues for trec by inhibiting ECON. The RST signal also remains active during
this time (see Figure 27 on page 43).
Note:
Most low power SRAMs on the market today can be used with the M41ST87Y/W RTC
SUPERVISOR. There are, however some criteria which should be used in making the final
choice of an SRAM to use. The SRAM must be designed in a way where the chip enable
input disables all other inputs to the SRAM. This allows inputs to the M41ST87Y/W and
SRAMs to be “Don’t Care” once VCC falls below VPFD(min). The SRAM should also
guarantee data retention down to VCC = 2.0 volts. The chip enable access time must be
sufficient to meet the system needs with the chip enable output propagation delays
included. If the SRAM includes a second chip enable pin (E2), this pin should be tied to
VOUT.
If data retention lifetime is a critical parameter for the system, it is important to review the
data retention current specifications for the particular SRAMs being evaluated. Most SRAMs
specify a data retention current at 3.0 volts. Manufacturers generally specify a typical
condition for room temperature along with a worst case condition (generally at elevated
temperatures). The system level requirements will determine the choice of which value to
use. The data retention current value of the SRAMs can then be added to the IBAT value of
the M41ST87Y/W to determine the total current requirements for data retention. The
available battery capacity for the battery of your choice can then be divided by this current to
determine the amount of data retention available.
For a further more detailed review of lifetime calculations, please see Application Note
AN1012.
2.5
Tamper detection circuit
The M41ST87Y/W provides two independent input pins, the tamper pin 1 input (TP1IN) and
tamper pin 2 input (TP2IN), which can be used to monitor two separate signals which can
result in the associated setting of the tamper bits (TB1 and/or TB2, in flag register 0Fh) if the
tamper enable bits (TEB1 and/or TEB2) are enabled, for the respective tamper 1 or tamper
2. The TP1IN pin or TP2IN pin may be set to indicate a tamper event has occurred by either
1) closing a switch to ground or VOUT (normally open), or by 2) opening a switch that was
previously closed to ground or VOUT (normally closed), depending on the state of the TCMX
bits and the TPMX bits in the tamper register (14h and/or 15h).
2.6
Tamper register bits (tamper 1 and tamper 2)
2.6.1
Tamper enable bits (TEB1 and TEB2)
When set to a logic '1,' this bit will enable the tamper detection circuit. This bit must be set to
'0' in order to clear the associated tamper bits (TBX, in 0Fh).
Note:
TEBX should be reset whenever the tamper detect condition is modified.
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