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参数资料
| 型号： | M45PE10-VMP6P |
| 厂商： | 意法半导体 |
| 元件分类： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 11/34页 |
| 文件大小： | 454K |
| 代理商： | M45PE10-VMP6P |
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M45PE10
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh)
all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction
must previously have been executed. After the
Write Enable (WREN) instruction has been decod-
ed, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address bytes on Serial
Data Input (D). Any address inside the Sector (see
Table 3.) is a valid address for the Sector Erase
(SE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 16..
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Sector Erase (SE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Sector Erase cycle (whose du-
ration is tSE) is initiated. While the Sector Erase cy-
cle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL)
bit is reset.
A Sector Erase (SE) instruction applied to a sector
that contains a page that is Hardware Protected is
not executed.
Any Sector Erase (SE) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress.
Figure 16. Sector Erase (SE) Instruction Sequence
Note: Address bits A23 to A17 are Don’t Care.
24 Bit Address
C
D
AI03751D
S
2
1
3456789
29 30 31
Instruction
0
23 22
2
0
1
MSB
相关PDF资料 |
PDF描述 |
|---|---|
| M45PE10-VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M464S3354BTS-C7A | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| M470T5663EH3-CF7 | DDR DRAM MODULE, ZMA200 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M45PE10-VMP6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface |
| M45PE10-VMP6TG | 功能描述:闪存 1 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M45PE10-VMP6TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMS6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M45PE16 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
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