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参数资料
| 型号： | M470L1624FU0-CA2 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM SODIMM |
| 中文描述： | 的DDR SDRAM SODIMM |
| 文件页数： | 12/20页 |
| 文件大小： | 264K |
| 代理商： | M470L1624FU0-CA2 |
DDR SDRAM
128MB, 256MB SODIMM Pb-Free
AC Timming Parameters & Specifications
Revision 1.2 Oct. 2004
Parameter
Symbol
B3
(DDR333@CL=2.5))
Min
A2
(DDR266@CL=2.0)
Min
B0
(DDR266@CL=2.5))
Min
Unit
Note
Max
Max
Max
Row cycle time
tRC
60
65
65
ns
Refresh row cycle time
tRFC
72
75
75
ns
Row active time
tRAS
42
70K
45
120K
45
120K
ns
RAS to CAS delay
tRCD
18
20
20
ns
Row precharge time
tRP
18
20
20
ns
Row active to Row active delay
tRRD
12
15
15
ns
Write recovery time
tWR
15
15
15
ns
Last data in to Read command
tWTR
1
1
1
tCK
Col. address to Col. address delay
tCCD
1
1
1
tCK
Clock cycle time
CL=2.0
tCK
7.5
12
7.5
12
10
12
ns
CL=2.5
6
12
7.5
12
7.5
12
ns
Clock high level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
DQS-out access time from CK/CK
tDQSCK
-0.6
+0.6
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
tAC
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
tDQSQ
-
0.45
-
0.5
-
0.5
ns
12
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read Postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
0
ns
3
DQS-in hold time
tWPRE
0.25
0.25
0.25
tCK
DQS falling edge to CK rising-setup time
tDSS
0.2
0.2
0.2
tCK
DQS falling edge from CK rising-hold time
tDSH
0.2
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
0.35
tCK
DQS-in cycle time
tDSC
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Address and Control Input setup time(fast)
tIS
0.75
0.9
0.9
ns
i,5.7~9
Address and Control Input hold time(fast)
tIH
0.75
0.9
0.9
ns
i,5.7~9
Address and Control Input setup time(slow)
tIS
0.8
1.0
1.0
ns
i, 6~9
Address and Control Input hold time(slow)
tIH
0.8
1.0
1.0
ns
i, 6~9
Data-out high impedence time from CK/CK
tHZ
+0.7
+0.75
+0.75
ns
1
Data-out low impedence time from CK/CK
tLZ
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
1
相关PDF资料 |
PDF描述 |
|---|---|
| M470L3224FU0-CA2 | Ring Core Bead Ferrite; Impedance:340ohm; Cable Diameter Max:0.203"; Width (Latch Included):1.23"; External Height:1.155"; External Width:1.125"; Length:1.25" |
| M485L1624FU0-CA2 | Ring Core Bead Ferrite; Impedance:200ohm; Cable Diameter Max:0.35"; Latch Height:0.2"; Width (Latch Included):0.885"; External Height:0.79"; External Width:0.77"; Length:1.45" |
| M470L1624FU0-CB0 | Split Core Ferrite Bead; Inner Diameter:0.45"; Package/Case:Split Ferrite Core; External Width:0.93"; Frequency:100MHz; Impedance:238ohm; Latch Height:0.38"; Mounting Type:Surface Mount; Width (Latch Included):1.035" RoHS Compliant: Yes |
| M470L3224FU0-CB0 | DDR SDRAM SODIMM |
| M470L1624FU0-CB3 | DDR SDRAM SODIMM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470L1624FU0-CB0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM SODIMM |
| M470L1624FU0-CB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM SODIMM |
| M470L1714BT0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM) |
| M470L1714BT0-CA0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM) |
| M470L1714BT0-CA2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM) |
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