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参数资料
| 型号： | M470L3324DU0-LB3 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | DDR SDRAM的缓冲模块18 4针缓冲模块的512MB的D为基础的模具66 TSOP-II |
| 文件页数： | 9/20页 |
| 文件大小： | 284K |
| 代理商： | M470L3324DU0-LB3 |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered SODIMM
Rev. 0.1 June 2005
Preliminary
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Voltage on any pin relative to V
SS
Voltage on V
DD
& V
DDQ
supply relative to V
SS
Storage temperature
Symbol
V
IN
,
V
OUT
V
DD
,
V
DDQ
T
STG
P
D
I
OS
Value
-0.5 ~ 3.6
Unit
V
-1.0 ~ 3.6
V
-55 ~ +150
°
C
Power dissipation
1.5 * # of component
W
Short circuit current
50
mA
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 70
°
C)
Note :
1. V
REF
is expected to be equal to 0.5*V
DDQ
of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on V
REF
may
not exceed +/-2% of the dc value.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
, and must track
variations in the DC level of V
REF
.
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,
for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers
due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to
source voltages from 0.1 to 1.0.
Parameter
Symbol
V
DD
Min
2.3
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V for DDR266/333)
2.7
V
Supply voltage(for device with a nominal V
DD
of 2.6V for DDR400)
V
DD
2.5
2.7
V
I/O Supply voltage(for device with a nominal V
DD
of 2.5V for DDR266/333)
I/O Supply voltage(for device with a nominal V
DD
of 2.6V for DDR400)
I/O Reference voltage
I/O Termination voltage(system)
V
DDQ
V
DDQ
V
REF
V
TT
V
IH
(DC)
V
IL
(DC)
V
IN
(DC)
V
ID
(DC)
VI(Ratio)
I
I
I
OZ
2.3
2.5
2.7
2.7
V
V
V
0.49*VDDQ
V
REF
-0.04
0.51*VDDQ
V
REF
+0.04
1
V
2
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input leakage current
Output leakage current
Output High Current(Normal strengh driver) ;V
OUT
= V
TT
+ 0.84V
Output High Current(Normal strengh driver) ;V
OUT
= V
TT
- 0.84V
Output High Current(Half strengh driver) ;V
OUT
= V
TT
+ 0.45V
Output High Current(Half strengh driver) ;V
OUT
= V
TT
- 0.45V
V
REF
+0.15
-0.3
-0.3
0.36
0.71
-2
-5
V
DDQ
+0.3
V
REF
-0.15
V
DDQ
+0.3
V
DDQ
+0.6
1.4
2
5
V
V
V
V
-
uA
uA
3
4
I
OH
-16.8
mA
I
OL
16.8
mA
I
OH
-9
mA
I
OL
9
mA
8.0 DC Operating Conditions
7.0 Absolute Maximum Ratings
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M470L3324DU0-LCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) |
| M470L6423CK0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity |
| M470L6423EN | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-A2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
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