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参数资料
| 型号： | M470L6423EN |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512MB Unbuffered SODIMM(based on sTSOP) |
| 中文描述： | 512MB的无缓冲的SODIMM（基于sTSOP） |
| 文件页数： | 7/13页 |
| 文件大小： | 145K |
| 代理商： | M470L6423EN |
DDR SDRAM
512MB Unbuffered SODIMM(based on sTSOP)
Rev. 1.3 March. 2004
(V
DD
=2.7V, T = 10
°
C)
M470L6423EN0 [ (32M x 8) * 8, 512MB Non ECC Module ]
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
B3(DDR333@CL=2.5)
1,160
1,360
48
400
320
560
880
1,720
1,720
1,800
48
24
2,680
A2(DDR266@CL=2)
1,000
1,200
48
320
290
480
720
1,480
1,440
1,640
48
24
2,360
B0(DDR266@CL=2.5)
1,000
1,200
48
320
290
480
720
1,480
1,440
1,640
48
24
2,360
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
IDD6
Normal
Low power
IDD7A
Optional
DDR SDRAM IDD spec table
相关PDF资料 |
PDF描述 |
|---|---|
| M470L6423EN0-A2 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CB3 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CLB3 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6524CU0 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470L6423EN0-A2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CLB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6524BT0-CA2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
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