参数资料
型号: M470L6524CU0-CCC
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
中文描述: DDR SDRAM的缓冲模块18 4针缓冲模块的基于C的512Mb芯片
文件页数: 17/17页
文件大小: 225K
代理商: M470L6524CU0-CCC
DDR SDRAM
256MB, 512MB Unbuffered SODIMM
Rev. 1.2 June 2005
17.2 64Mx64 (M470L6524CU0)
Tolerances :
±
.006(.15) unless otherwise specified
The used device is 32Mx16 SDRAM, TSOPII
SDRAM Part No. : K4H511638C-U***
2.70
(67.60)
2.50
(63.60)
Units : Inches (Millimeters)
Full R 2.0
0.17
(4.20)
0.096
(2.40+/-0.1)
0.456
11.40
1.896
(47.40)
0
(
0.086
2.15
0
(
Detail Z
0.16
±
0.0039
(4.00
±
0.10)
0.04
±
0.0039
(1.00
±
0.1)
2-
φ
0.07
(1.8+0.1/-0.0)
1
(
0.16
±
0.039
(4.00
±
0.10)
0.07
(1.8+/-0.1)
0.150 Max
(3.80 Max)
0
0.04
±
0.0039
(1.00
±
0.10)
0
(
(
1
0.024 TYP
(0.60 TYP)
0.018
±
0.001
0.01
(0.2+/-0.15)
0
(
Detail Y
2
0.098
2.45
40 42
39 41
Z
Y
199
200
相关PDF资料
PDF描述
M470L3324CU0-LA2 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
M470L6524CU0-LA2 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
M470L3324CU0-LB0 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
M470L6524CU0-LB0 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
M470L3324CU0-LB3 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
相关代理商/技术参数
参数描述
M470L6524CU0-LA2 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
M470L6524CU0-LB0 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
M470L6524CU0-LB3 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
M470L6524CU0-LCC 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
M470L6524DU0 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Product Guide