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参数资料
| 型号： | M470T2953BY0 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| 中文描述： | 200pin缓冲的SODIMM基于512Mb乙芯片64位非ECC |
| 文件页数： | 8/20页 |
| 文件大小： | 270K |
| 代理商： | M470T2953BY0 |
Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Absolute Maximum DC Ratings
AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
V
IN
,
V
OUT
Voltage on any pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
T
STG
Storage Temperature
-55 to +100
°
C
1, 2
1.
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please
refer to JESD51-2 standard.
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
1.7
1.8
1.9
V
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
VTT
Termination Voltage
V
REF
-0.04
V
REF
V
REF
+0.04
V
3
There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must
be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T2953BY0-LD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T2953BY3-LD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T2953CZ0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
| M470T2953CZ0-CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
| M470T2953CZ0-CCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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