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参数资料
| 型号： | M470T3354CZ0-CD5 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| 中文描述： | 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC |
| 文件页数： | 16/20页 |
| 文件大小： | 270K |
| 代理商： | M470T3354CZ0-CD5 |
Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Parameter
Symbol
DDR2-667
DDR2-533
DDR2-400
Units
min
max
min
max
min
max
ODT turn-off (Power-
Down mode)
t
AOFPD
tAC(mi
n)+2
2.5tCK
+tAC(
max)+
1
tAC(mi
n)+2
2.5tCK
+
tAC(m
ax)+1
tAC(mi
n)+2
2.5tCK
+
tAC(ma
x)+1
ns
ODT to power down
entry latency
tANPD
3
3
3
tCK
ODT power down exit
latency
tAXPD
8
8
8
tCK
OCD drive mode
output delay
tOIT
0
12
0
12
0
12
ns
Minimum time clocks
remains ON after CKE
asynchronously drops
LOW
tDelay
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
ns
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|---|---|
| M470T2953CZ0-CD6 | DDR2 Unbuffered SODIMM |
| M470T2953CZ0-D5 | DDR2 Unbuffered SODIMM |
| M470T2953CZ0-E6 | DDR2 Unbuffered SODIMM |
| M470T6554CZ0 | DDR2 Unbuffered SODIMM |
| M48T02-150PC1 | 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T3354CZ0-CD6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
| M470T3354CZ0-CE6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ0-CE7 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ0-CLCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ0-CLD5 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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