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参数资料
| 型号： | M470T3354CZ3-CE7 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| 中文描述： | 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC |
| 文件页数： | 11/18页 |
| 文件大小： | 328K |
| 代理商： | M470T3354CZ3-CE7 |
Rev. 1.2 Aug. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Operating Current Table(1-1)
(T
A
=0
o
C, VDD= 1.9V)
M470T6554CZ3/M470T6554CZ0 : 64Mx64 512MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
667@CL=5
533@CL=4
400@CL=3
Unit
Notes
CE7
LE7
CE6
LE6
CD5
LD5
CCC
LCC
IDD0
TBD
560
480
520
460
520
460
mA
IDD1
TBD
620
540
580
520
580
520
mA
IDD2P
TBD
64
40
64
36
64
36
mA
IDD2Q
TBD
280
240
240
200
240
200
mA
IDD2N
TBD
320
280
280
240
280
240
mA
IDD3P-F
TBD
240
200
240
200
240
200
mA
IDD3P-S
TBD
96
64
96
64
96
64
mA
IDD3N
TBD
380
320
340
280
340
280
mA
IDD4W
TBD
860
800
760
700
680
620
mA
IDD4R
TBD
880
820
780
720
700
640
mA
IDD5
TBD
760
680
700
620
700
620
mA
IDD6
TBD
64
32
64
32
64
32
mA
IDD7
TBD
1,360
1,220
1,340
1,200
1,340
1,200
mA
M470T3354CZ3/M470T3354CZ0 : 32Mx64 256MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
667@CL=5
533@CL=4
400@CL=3
Unit
Notes
CE7
LE7
CE6
LE6
CD5
LD5
CCC
LCC
IDD0
TBD
400
340
380
340
380
340
mA
IDD1
TBD
460
400
440
400
440
400
mA
IDD2P
TBD
32
20
32
18
32
18
mA
IDD2Q
TBD
140
120
120
100
120
100
mA
IDD2N
TBD
160
140
140
120
140
120
mA
IDD3P-F
TBD
120
100
120
100
120
100
mA
IDD3P-S
TBD
48
32
48
32
48
32
mA
IDD3N
TBD
220
180
200
160
200
160
mA
IDD4W
TBD
700
660
620
580
540
500
mA
IDD4R
TBD
720
680
640
600
560
520
mA
IDD5
TBD
600
540
560
500
560
500
mA
IDD6
TBD
32
16
32
16
32
16
mA
IDD7
TBD
1,200
1,080
1,200
1,080
1,200
1,080
mA
相关PDF资料 |
PDF描述 |
|---|---|
| M470T6554CZ3-CE7 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLCC | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CLCC | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLD5 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CLD5 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T3354CZ3-CLCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLD5 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLE6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLE7 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZX | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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