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参数资料
| 型号： | M470T6554CZ0-CLE7 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| 中文描述： | 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC |
| 文件页数： | 12/18页 |
| 文件大小： | 328K |
| 代理商： | M470T6554CZ0-CLE7 |
Rev. 1.2 Aug. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Operating Current Table(1-2)
(T
A
=0
o
C, VDD= 1.9V)
M470T2953CZ3/M470T2953CZ0 : 128Mx64 1GB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
667@CL=5
533@CL=4
400@CL=3
Unit
Notes
CE7
LE7
CE6
LE6
CD5
LD5
CCC
LCC
IDD0
TBD
1,000
800
920
760
920
760
mA
IDD1
TBD
1,120
880
1,040
840
1,040
840
mA
IDD2P
TBD
128
80
128
72
128
72
mA
IDD2Q
TBD
560
480
480
400
480
400
mA
IDD2N
TBD
640
560
560
480
560
480
mA
IDD3P-F
TBD
480
400
480
400
480
400
mA
IDD3P-S
TBD
192
128
192
128
192
128
mA
IDD3N
TBD
760
640
680
560
680
560
mA
IDD4W
TBD
1,440
1,320
1,240
1,120
1,160
1,000
mA
IDD4R
TBD
1,480
1,360
1,280
1,160
1,160
1,040
mA
IDD5
TBD
1,520
1,360
1,400
1,240
1,400
1,240
mA
IDD6
TBD
128
64
128
64
128
64
mA
IDD7
TBD
2,080
1,720
2,040
1,680
2,040
1,680
mA
Input/Output Capacitance
(VDD=1.8V, VDDQ=1.8V, TA=25
o
C)
* DM is internally loaded to match DQ and DQS identically.
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Units
Non-ECC
M470T6554CZ3
M470T6554CZ0
M470T3354CZ3
M470T3354CZ0
M470T2953CZ3
M470T2953CZ0
Input capacitance, CK and CK
CCK
-
32
-
24
-
48
pF
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
CI
-
34
-
34
-
42
Input/output capacitance, DQ, DM, DQS, DQS
CIO(400/533)
-
10
-
6
-
10
CIO(667/800)
-
9
-
5.5
-
9
相关PDF资料 |
PDF描述 |
|---|---|
| M470T3354CZ3-CE6 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CE6 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CE7 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CE7 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLCC | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T6554CZ0-D5 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
| M470T6554CZ0-E6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
| M470T6554CZ3-CCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CD5 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CD500 | 制造商:Samsung Semiconductor 功能描述:DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray |
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