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参数资料
| 型号： | M470T6554CZ3-CLCC |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| 中文描述： | 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC |
| 文件页数： | 4/18页 |
| 文件大小： | 328K |
| 代理商： | M470T6554CZ3-CLCC |
Rev. 1.2 Aug. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Input/Output Functional Description
Symbol
Type
Function
CK0-CK1
CK0-CK1
Input
The system clock inputs. All address and command lines are sampled on the cross point of the rising edge of CK and fall-
ing edge of CK . A Delay Locked Loop (DLL) circuit is driven from the clock input and output timing for read operations is
synchronized to the input clock.
CKE0-CKE1
Input
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low, By deactivating the clocks,
CKE low initiates the Power Down mode or the Self Refesh mode.
S0-S1
Input
Enables the associated DDR2 SDRAM command decoder when low and disables the command decoder when high.
When the command decoder is disabled, new commands are ignored but previous operations continue. Rank 0 is selected
by S0, Rank 1 is selected by S1. Ranks are also called “Physical banks”.
RAS, CAS, WE
Input
When sampled at the cross point of the rising edge of CK and falling edge of CK, CAS, RAS, and WE define the operation
to be executed by the SDRAM.
BA0~BA1
Input
Selects which DDR2 SDRAM internal bank is activated.
ODT0~ODT1
Input
Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR2 SDRAM Extended Mode Register
Set (EMRS).
A0~A9,
A10/AP,
A11~A13
Input
During a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of CK
and falling edge of CK. During a Read or Write command cycle, defines the column address when sampled at the cross
point of the rising edge of CK and falling edge of CK. In addition to the column address, AP is used to invoke autopre-
charge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-BAn defines
the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in con-
junction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be pecharged regardiess of the
state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.
DQ0~DQ63
In/Out
Data Input/Output pins.
DM0~DM7
Input
The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask by allowing input data to
be written if it is low but blocks the write operation if it is high. In Read mode, DM lines have no effect.
DQS0~DQS7
DQS0~DQS7
In/Out
The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the data strobe is sourced by
the controller and is centered in the data window. In Read mode, the data strobe is sourced by the DDR2 SDRAMs and is
sent at the leading edge of the data window. DQS signals are complements, and timing is relative to the crosspoint of
respective DQS and DQS If the module is to be operated in single ended strobe mode, all DQS signals must be tied on the
system board to VSS and DDR2 SDRAM mode registers programmed appropriately.
V
DD
,V
DD
SPD,V
SS
Supply
Power supplies for core, I/O, Serial Presence Detect, and ground for the module.
SDA
In/Out
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resistor must be connected to V
DD
to act
as a pull up.
SCL
Input
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from SCL to V
DD
to act as
a pull up.
SA0~SA1
Input
Address pins used to select the Serial Presence Detect base address.
TEST
In/Out
The TEST pin is reserved for bus analysis tools and is not connected on normal memory modules(SO-DIMMs).
相关PDF资料 |
PDF描述 |
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| M470T3354CZ3-CLD5 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CLD5 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLE6 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T6554CZ3-CLD5 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CLE6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CLE7 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554EZ3-CE600 | 制造商:Samsung 功能描述:512 DDR SDRAM MODUL X64 BOC(LF) - Trays |
| M470T6554GZ3CE600 | 制造商:Samsung SDI 功能描述:9E |
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