- 您现在的位置：买卖IC网 > PDF目录383302 > M470T6554CZ3-CLD5 (SAMSUNG SEMICONDUCTOR CO. LTD.) DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC PDF资料下载
参数资料
| 型号： | M470T6554CZ3-CLD5 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| 中文描述： | 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC |
| 文件页数： | 8/18页 |
| 文件大小： | 328K |
| 代理商： | M470T6554CZ3-CLD5 |
Rev. 1.2 Aug. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Absolute Maximum DC Ratings
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
Note : There is no specific device V
DD
supply voltage requirement for SSTL-1.8 compliance. However under all conditions V
DDQ
must be less than or equal
to V
DD
.
1. The value of V
REF
may be selected by the user to provide optimum noise margin in the system. Typically the value of V
REF
is expected to be about 0.5
x V
DDQ
of the transmitting device and V
REF
is expected to track variations in V
DDQ
.
2. Peak to peak AC noise on V
REF
may not exceed +/-2% V
REF
(DC).
3. V
TT
of transmitting device must track V
REF
of receiving device.
4. AC parameters are measured with V
DD
, V
DDQ
and V
DDL
tied together.
Symbol
Parameter
Rating
Units
Notes
V
DD
Voltage on V
DD
pin relative to V
SS
- 1.0 V ~ 2.3 V
V
1
V
DDQ
Voltage on V
DDQ
pin relative to V
SS
- 0.5 V ~ 2.3 V
V
1
V
DDL
Voltage on V
DDL
pin relative to V
SS
- 0.5 V ~ 2.3 V
V
1
V
IN,
V
OUT
Voltage on any pin relative to V
SS
- 0.5 V ~ 2.3 V
V
1
T
STG
Storage Temperature
-55 to +100
°
C
1, 2
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
V
DD
Supply Voltage
1.7
1.8
1.9
V
V
DDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
V
DDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
V
REF
Input Reference Voltage
0.49*V
DDQ
0.50*V
DDQ
0.51*V
DDQ
mV
1,2
V
TT
Termination Voltage
V
REF
-0.04
V
REF
V
REF
+0.04
V
3
相关PDF资料 |
PDF描述 |
|---|---|
| M470T3354CZ3-CLE6 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLE7 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ0-CC | DDR2 Unbuffered SODIMM |
| M470T3354CZ0-CD6 | DDR2 Unbuffered SODIMM |
| M470T6554CZ0-CD6 | DDR2 Unbuffered SODIMM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T6554CZ3-CLE6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CLE7 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554EZ3-CE600 | 制造商:Samsung 功能描述:512 DDR SDRAM MODUL X64 BOC(LF) - Trays |
| M470T6554GZ3CE600 | 制造商:Samsung SDI 功能描述:9E |
| M470T6554GZ3-CE6KN | 制造商:Samsung 功能描述:DDR2 512MEG DRAM - Trays |
发布紧急采购，3分钟左右您将得到回复。