参数资料
型号: M48T212YMH
厂商: 意法半导体
英文描述: 5V/3.3V TIMEKEEPER[ CONTROLLER
中文描述: 5V/3.3V计时[控制器
文件页数: 3/23页
文件大小: 150K
代理商: M48T212YMH
3/23
M48T212Y, M48T212V
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Stresses greater than those listed under ”Absolute Maximum Ratings” may cause permanent damage to thedevice. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2. Soldering temperature not to exceed 260
°
C for 10 seconds (total thermal budget not to exceed 150
°
C for longer than 30 seconds).
CAUTION:
Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION:
Do NOT wave solder SOIC to avoiddamaging SNAPHATsockets.
Table 3. Operating Modes
(1)
Note: 1. X = V
IH
or V
IL
.
2. V
SO
= Battery Back-up Switchover Voltage. (See Tables 7A and 7B for details).
Table 4. Truth Table for SRAM Bank Select
(1)
Note: 1. X = V
IH
or V
IL
.
2. V
SO
= Battery Back-up Switchover Voltage. (See Tables 7A and 7B for details).
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
0 to 70
°
C
T
STG
Storage Temperature (V
CC
Off, Oscillator Off)
SNAPHAT
SOIC
–40 to 85
–55 to 125
°
C
T
SLD(2)
Lead Solder Temperature for 10 sec
260
°
C
V
IO
Input or Output Voltages
–0.3 to V
CC
+0.3
V
V
CC
Supply Voltage
M48T212Y
M48T212V
–0.3 to 7
–0.3 to 4.6
V
I
O
Output Current
20
mA
P
D
Power Dissipation
1
W
Mode
V
CC
E
G
W
DQ7-DQ0
Power
Deselect
4.5V to 5.5V
or
3.0V to 3.6V
V
IH
X
X
High-Z
Standby
Write
V
IL
X
V
IL
D
IN
Active
Read
V
IL
V
IL
V
IH
D
OUT
Active
Read
V
IL
V
IH
V
IH
High-Z
Active
Deselect
V
SO
to V
PFD
(min)
(2)
X
X
X
High-Z
CMOS Standby
Deselect
V
SO(2)
X
X
X
High-Z
Battery Back-Up
Mode
V
CC
EX
A
E1
CON
E2
CON
Power
Select
4.5V to 5.5V
or
3.0V to 3.6V
Low
Low
Low
High
Active
Low
High
High
Low
Active
Deselect
High
X
High
High
Standby
Deselect
V
SO
to V
PFD
(min)
(2)
X
X
High
High
CMOS Standby
Deselect
V
SO(2)
X
X
High
High
Battery Back-Up
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