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参数资料
| 型号： | M48T248V-85PM1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM |
| 中文描述： | 5.0或3.3V，1024K与幻象计时器的SRAM |
| 文件页数： | 14/24页 |
| 文件大小： | 306K |
| 代理商： | M48T248V-85PM1TR |
M48T248Y, M48T248V
14/24
Data Retention Mode
Data can be read or written only when V
CC
is
greater than V
PFD
. When V
CC
is below V
PFD
(the
point at which write protection occurs), the clock
registers and the SRAM are blocked from any ac-
cess. When V
CC
falls below the Battery Switch
Over threshold (V
SO
), the device is switched from
V
CC
to battery backup (V
BAT
). RTC operation and
SRAM data are maintained via battery backup un-
til power is stable. All control, data, and address
signals must be powered down when V
CC
is pow-
ered down.
The lithium power source is designed to provide
power for RTC activity as well as RTC and RAM
data retention when V
CC
is absent or unstable.
The capability of this source is sufficient to power
the device continuously for the life of the equip-
ment into which it has been installed. For specifi-
cation purposes, life expectancy is ten (10) years
at 25°C with the internal oscillator running without
V
CC
. Each unit is shipped with its energy source
disconnected, guaranteeing full energy capacity.
When V
CC
is first applied at a level greater than
V
PFD
, the energy source is enabled for battery
backup operation. The actual life expectancy will
be much longer if no battery energy is used (e.g.,
when V
CC
is present).
Figure 9. Power Down/Up Mode AC Waveforms
Table 9. Power Down/Up Trip Points DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70°C; V
CC
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. At 25°C, V
CC
= 0V; the expected t
DR
is defined as cumulative time in the absence of V
CC
with the clock oscillator running.
Symbol
Parameter
(1)
Min
Max
Unit
t
REC
V
PFD
(max) to CE low
1.5
2.5
ms
t
F
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μ
s
t
FB
V
PFD
(min) to V
SO
V
CC
Fall Time
10
μ
s
t
R
V
PFD
(min) to V
PFD
(max) V
CC
Rise Time
0
μ
s
t
PD
CE High to Power-Fail
0
μ
s
t
DR(2)
Expected Data Retention Time
10
Years
tDR
tF
tREC
tR
tPD
tFB
VSO
VCC
CE
VPFD (max)
VPFD (min)
AI04236
相关PDF资料 |
PDF描述 |
|---|---|
| M48T248VPM | 5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM |
| M48T251V-70PM1 | 5.0 or 3.3V, 4096K TIMEKEEPER SRAM with PHANTOM |
| M48T251V-70PM1TR | 5.0 or 3.3V, 4096K TIMEKEEPER SRAM with PHANTOM |
| M48T251V-85PM1 | 5.0 or 3.3V, 4096K TIMEKEEPER SRAM with PHANTOM |
| M48T251V-85PM1TR | 5.0 or 3.3V, 4096K TIMEKEEPER SRAM with PHANTOM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T248VPM | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM |
| M48T248Y | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM |
| M48T248Y-70PM1 | 功能描述:实时时钟 1M (128Kx8) 70ns RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| M48T248Y-70PM1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM |
| M48T248Y-85PM1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM |
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