参数资料
型号: M48T251VPM
厂商: 意法半导体
英文描述: 5.0 or 3.3V, 4096K TIMEKEEPER SRAM with PHANTOM
中文描述: 5.0或3.3V,4096K与幻象计时器的SRAM
文件页数: 9/24页
文件大小: 366K
代理商: M48T251VPM
9/24
M48T251Y, M48T251V
Table 3. Memory AC Characteristics, M48T251Y
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70°C; V
CC
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. These parameters are sampled with a 5 pF load are not 100% tested.
3. t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE going low to the earlier of CE or
WE going high.
4. t
DH
and t
DS
are measured from the earlier of CE or WE going high.
Symbol
Parameter
(1)
M48T251Y–70
Unit
Min
Max
t
AVAV
t
RC
READ Cycle Time
70
ns
t
AVQV
t
ACC
Access Time
70
ns
t
ELQV
t
CO
Chip Enable Low to Output Valid
70
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
35
ns
t
ELQX
t
GLQX
t
COE
Chip Enable or Output Enable Low to Output Transition
5
ns
t
AXQX
tOH
Output Hold from Address Change
5
ns
t
EHQZ
t
GHQZ
t
OD(2)
Chip Enable or Output Enable High to Output Hi-Z
25
ns
t
WLQZ
t
ODW(2)
Output Hi-Z from WE
25
ns
t
AVAV
t
WC
WRITE Cycle Time
70
ns
t
WLWH
t
ELEH
t
WP(3)
WE, CE Pulse Width
50
ns
t
AVEL
t
AVWL
t
AW
Address Setup Time
0
ns
t
EHAX
t
WR1
WRITE Recovery Time
15
ns
t
WHAX
t
WR2
Address Hold Time from WE
0
ns
t
WHQX
t
OEW
Output Active from WE
5
ns
t
DVEH
t
DVWH
t
DS(4)
Data Setup Time
30
ns
t
WHDX
t
DH1(4)
Data Hold Time from WE
0
ns
t
EHDX
t
DH2(4)
Data Hold Time from CE
10
ns
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