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参数资料
| 型号： | M48T35AV-10MH6E |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 时钟/数据恢复及定时提取 |
| 英文描述： | REAL TIME CLOCK, PDSO28 |
| 封装： | 0.330 INCH, LEAD FREE, PLASTIC, SOH-28 |
| 文件页数： | 2/25页 |
| 文件大小： | 510K |
| 代理商： | M48T35AV-10MH6E |
M48T35AY, M48T35AV
10/25
Data Retention Mode
With valid VCC applied, the M48T35AY/V operates
as a conventional BYTEWIDE static RAM.
Should the supply voltage decay, the RAM will au-
tomatically power-fail deselect, write protecting it-
self when VCC falls within the VPFD (max), VPFD
11., page 18). All outputs become high imped-
ance, and all inputs are treated as “don't care.”
Note: A power failure during a WRITE cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's con-
tent. At voltages below VPFD (min), the user can be
assured the memory will be in a write protected
state, provided the VCC fall time is not less than tF.
The M48T35AY/V may respond to transient noise
spikes on VCC that reach into the deselect window
during the time the device is sampling VCC. There-
fore, decoupling of the power supply lines is rec-
ommended.
When VCC drops below VSO, the control circuit
switches power to the internal battery which pre-
serves data and powers the clock. The internal
button cell will maintain data in the M48T35AY/V
for an accumulated period of at least 7 years when
VCC is less than VSO. As system power returns
and VCC rises above VSO, the battery is discon-
nected and the power supply is switched to exter-
nal VCC. Write protection continues until VCC
reaches VPFD (min) plus trec (min). E should be
kept high as VCC rises past VPFD (min) to prevent
inadvertent WRITE cycles prior to processor stabi-
lization. Normal RAM operation can resume trec af-
ter VCC exceeds VPFD (max).
Also, as VCC rises, the battery voltage is checked.
If the voltage is less than approximately 2.5V, an
internal Battery Not OK (BOK) flag will be set. The
BOK flag can be checked after power up. If the
BOK flag is set, the first WRITE attempted will be
blocked. The flag is automatically cleared after the
first WRITE, and normal RAM operation resumes.
Figure 10 illustrates how a BOK check routine
could be structured.
For more information on Battery Storage Life refer
to the Application Note AN1012.
Figure 10. Checking the BOK Flag Status
READ DATA
AT ANY ADDRESS
AI00607
IS DATA
COMPLEMENT
OF FIRST
READ?
(BATTERY OK)
POWER-UP
YES
NO
WRITE DATA
COMPLEMENT BACK
TO SAME ADDRESS
READ DATA
AT SAME
ADDRESS AGAIN
NOTIFY SYSTEM
OF LOW BATTERY
(DATA MAY BE
CORRUPTED)
WRITE ORIGINAL
DATA BACK TO
SAME ADDRESS
(BATTERY LOW)
CONTINUE
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|---|---|
| M48T35Y-70PM1 | 0 TIMER(S), REAL TIME CLOCK, PDIP28 |
| M48T35Y-70MH6TR | 0 TIMER(S), REAL TIME CLOCK, PDSO28 |
| M48T35-70PC1 | 0 TIMER(S), REAL TIME CLOCK, PDIP28 |
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| M48T36Y-70MH1TR | 0 TIMER(S), REAL TIME CLOCK, PDSO44 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T35AV-10MH6F | 功能描述:NVRAM 256K (32Kx8) 100ns RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| M48T35AV-10MH6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x8 TIMEKEEPER SRAM |
| M48T35AV-10PC1 | 功能描述:NVRAM 256K (32Kx8) 100ns RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| M48T35AV-10PC1 | 制造商:STMicroelectronics 功能描述:NVRAM Memory IC |
| M48T35AV-10PC1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER㈢ SRAM |
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