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参数资料
| 型号： | M48T35AV-10MH6F |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 时钟/数据恢复及定时提取 |
| 英文描述： | REAL TIME CLOCK, PDSO28 |
| 封装： | 0.330 INCH, LEAD FREE, PLASTIC, SOH-28 |
| 文件页数： | 22/25页 |
| 文件大小： | 510K |
| 代理商： | M48T35AV-10MH6F |
M48T35AY, M48T35AV
6/25
OPERATION MODES
As Figure 6., page 5 shows, the static memory ar-
ray and the quartz controlled clock oscillator of the
M48T35AY/V are integrated on one silicon chip.
The two circuits are interconnected at the upper
eight memory locations to provide user accessible
BYTEWIDE clock information in the bytes with
addresses 7FF8h-7FFFh.
The clock locations contain the year, month, date,
day, hour, minute, and second in 24 hour BCD for-
mat. Corrections for 28, 29 (leap year - valid until
2100), 30, and 31 day months are made automat-
ically. Byte 7FF8h is the clock control register. This
byte controls user access to the clock information
and also stores the clock calibration setting.
The eight clock bytes are not the actual clock
counters themselves; they are memory locations
consisting of BiPORT READ/WRITE memory
cells. The M48T35AY/V includes a clock control
circuit which updates the clock bytes with current
information once per second. The information can
be accessed by the user in the same manner as
any other location in the static memory array.
The M48T35AY/V also has its own Power-fail De-
tect circuit. The control circuitry constantly moni-
tors the single 3V supply for an out of tolerance
condition. When VCC is out of tolerance, the circuit
write protects the SRAM, providing a high degree
of data security in the midst of unpredictable sys-
tem operation brought on by low VCC. As VCC falls
below the Battery Back-up Switchover Voltage
(VSO), the control circuitry connects the battery
which maintains data and clock operation until val-
id power returns.
Table 2. Operating Modes
Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
1. See Table 11., page 18 for details.
Mode
VCC
E
G
W
DQ0-DQ7
Power
Deselect
4.5 to 5.5V
or
3.0 to 3.6V
VIH
X
High Z
Standby
WRITE
VIL
X
VIL
DIN
Active
READ
VIL
VIH
DOUT
Active
READ
VIL
VIH
High Z
Active
Deselect
VSO to VPFD (min)
(1)
X
High Z
CMOS Standby
Deselect
≤ VSO(1)
X
High Z
Battery Back-up Mode
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T35AV-10MH6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x8 TIMEKEEPER SRAM |
| M48T35AV-10PC1 | 功能描述:NVRAM 256K (32Kx8) 100ns RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| M48T35AV-10PC1 | 制造商:STMicroelectronics 功能描述:NVRAM Memory IC |
| M48T35AV-10PC1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER㈢ SRAM |
| M48T35AV-10PC1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER㈢ SRAM |
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