参数资料
型号: M48T37Y-10MH1TR
厂商: 意法半导体
英文描述: 3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM
中文描述: 3.3 - 5V的256千位的32KB的SRAM x8计时器
文件页数: 2/20页
文件大小: 128K
代理商: M48T37Y-10MH1TR
M48T37Y, M48T37V
2/20
Figure 2. SOIC Connections
AI02174
22
44
43
42
41
VSS
1
2
3
4
A1
A0
A7
A6
A5
A4
A3
NC
A2
A13
A8
A9
A11
G
NC
NC
DQ7
DQ6
NC
NC
NC
E
VCC
M48T37Y
M48T37V
10
11
12
13
14
15
16
17
18
19
20
5
6
7
8
9
21
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A12
A14
IRQ/FT
W
DQ0
DQ1
DQ2
NC
DQ5
DQ4
DQ3
NC
WDI
NC
RST
NC
NC
A10
NC
NC
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Stresses greater than those listed under ”Absolute Maximum Ratings” may cause permanent damage to thedevice. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2. Soldering temperature not to exceed 260
°
C for 10 seconds (total thermal budget not to exceed 150
°
C for longer than 30 seconds).
CAUTION:
Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION:
Do NOT wave solder SOIC to avoiddamaging SNAPHATsockets.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
Grade 1
0 to 70
°
C
Grade 6
–40 to 85
°
C
T
STG
Storage Temperature (V
CC
Off,Oscillator Off)
SNAPHAT
–40 to 85
°
C
SOIC
–55 to 125
°
C
T
SLD(2)
Lead Solder Temperature for 10 seconds
260
°
C
V
IO
Input or Output Voltages
M48T37Y
–0.3 to 7
V
M48T37V
–0.3 to 4.6
V
V
CC
Supply Voltage
M48T37Y
–0.3 to 7
V
M48T37V
–0.3 to 4.6
V
I
O
Output Current
10
mA
P
D
Power Dissipation
1
W
DESCRIPTION
The M48T37Y/37V TIMEKEEPER
RAM is a
32Kb x8 non-volatile static RAM and real time
clock. The monolithic chip is available in a special
package which provides a highly integrated bat-
tery backed-up memory and real time clock solu-
tion.
The 44 lead 330mil SOIC package provides sock-
ets with gold-plated contacts at both ends for di-
rect connection to a separate SNAPHAT housing
containing the battery and crystal. The unique de-
sign allows the SNAPHAT battery package to be
mounted on top of the SOIC package after the
completion of the surface mount process.
Insertion of the SNAPHAT housing after reflow
prevents potential battery and crystal damage due
to the high temperatures required for device sur-
face-mounting. The SNAPHAT housing is keyed
to prevent reverse insertion.
The SOIC and battery packages are shipped sep-
arately in plastic anti-static tubes or in Tape &Reel
form. For the 44 lead SOIC, the battery/crystal
package (i.e. SNAPHAT) part number is ”M4T28-
BR12SH” or ”M4T32-BR12SH”.
Caution:
Donotplace the SNAPHAT battery/crys-
tal topin conductive foam,as this will drain the lith-
ium button-cell battery.
As Figure 3 shows, the static memory array and
the quartz controlled clock oscillator of the
M48T37Y/37V are integrated on one silicon chip.
相关PDF资料
PDF描述
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