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参数资料
| 型号： | M48T59V-70PC1 |
| 厂商： | 意法半导体 |
| 英文描述： | 64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| 中文描述： | 64千位8KB的x8 SRAM的计时器 |
| 文件页数： | 15/21页 |
| 文件大小： | 168K |
| 代理商： | M48T59V-70PC1 |
15/21
M48T59, M48T59Y, M48T59V
Figure 13. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in Figure
13) is recommended in order to provide the need-
ed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T59V-70PC1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3 V, 64 Kbit (8 Kbit x 8) TIMEKEEPER? SRAM |
| M48T59V-70PC1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3 V, 64 Kbit (8 Kbit x 8) TIMEKEEPER? SRAM |
| M48T59V-70PC1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| M48T59V-70PC6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| M48T59V-70PC6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
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