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参数资料
| 型号： | M54585KP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 20P2E-A, 20 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 69K |
| 代理商： | M54585KP |
Jan. 2000
Unit :
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
INPUT
OUTPUT
GND
2.7k
3k
7.2k
COM
IN7
→
→O7
10
IN5
→
→O5
5
12
INPUT
OUTPUT
IN4→
→O4
4
13
IN3
→
→O3
3
14
IN2→
→O2
15
2
IN1
→
→O1
16
7
8
IN6→
→O6
6
11
→COM COMMON
GND
9
17
18
IN8 →
→O8
1
20
19
NC
NC : No connection
Package type 20P2E-A
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
DESCRIPTION
M54585KP is eight-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-cur-
rent driving with extremely low input-current supply.
FEATURES
q High breakdown voltage (BVCEO
≥ 50V)
q
High-current driving (IC(max) = 500mA)
q With clamping diodes
q
Driving available with TTL output or with PMOS IC output
q
With shrink small outline package
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
FUNCTION
The M54585KP has eight circuits, which are NPN Darlington
transistors. Input transistors have resistance of 2.7k
be-
tween the base and input pin. A spike-killer clamping diode
is provided between each output pin and GND. Output tran-
sistor emitters are all connected to the GND pin.
Collector current is 500mA maximum. The maximum collec-
tor-emitter voltage is 50V.
CIRCUIT DIAGRAM
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
°C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
0.68
–20 ~ +75
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M54585P | 制造商:Powerex Power Semiconductors 功能描述:8-Unit 500MA Transistor Array With Clamp DIP |
| M54585WP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54587 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54587FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54587P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
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