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参数资料
| 型号： | M54HC125D1 |
| 厂商： | 意法半导体 |
| 英文描述： | RAD-HARD QUAD BUS BUFFER (3-STATE) |
| 中文描述： | 抗辐射四总线缓冲器（三态） |
| 文件页数： | 4/9页 |
| 文件大小： | 117K |
| 代理商： | M54HC125D1 |
M54HC125
4/9
AC ELECTRICAL CHARACTERISTICS (Input tr =tf =6ns)
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) =CPD xVCC xfIN +ICC/4 (per buffer)
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
CL
(pF)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
tTLH tTHL Output Transition
Time
2.0
50
20
60
75
90
ns
4.5
6
12
15
18
6.0
5
10
13
15
tPLH tPHL Propagation Delay
Time
2.0
50
36
75
95
110
ns
4.5
9
15
19
22
6.0
8
13
16
19
2.0
150
52
105
130
160
ns
4.5
13
21
26
32
6.0
11
18
22
27
tPZL tPZH High Impedance
Output Enable
Time
2.0
50
RL =1 K
36
75
95
110
ns
4.5
9
15
19
22
6.0
8
13
16
19
2.0
150
RL =1 K
52
105
130
160
ns
4.5
13
21
26
32
6.0
11
18
22
27
tPLZ tPHZ High Impedance
Output Disable
Time
2.0
50
RL =1 K
48
80
100
120
ns
4.5
12
16
20
24
6.0
10
14
17
20
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
CIN
Input Capacitance
5.0
5
10
pF
CPD
Power Dissipation
Capacitance (note
1)
5.0
35
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M54HC125F1R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:QUAD BUS BUFFERS 3-STATE |
| M54HC125K | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:RAD-HARD QUAD BUS BUFFER (3-STATE) |
| M54HC125K1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:RAD-HARD QUAD BUS BUFFER (3-STATE) |
| M54HC125M1R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:QUAD BUS BUFFERS 3-STATE |
| M54HC126 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:QUAD BUS BUFFERS 3-STATE |
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