参数资料
型号: M58BF008B100D6T
厂商: 意法半导体
英文描述: 8 Mbit 256Kb x32, Burst Flash Memory
中文描述: 8兆位的256Kb X32号,突发快闪记忆体
文件页数: 13/36页
文件大小: 231K
代理商: M58BF008B100D6T
13/36
M58BF008
Wrap/No-wrap Burst Toggle (WBT).
The
fault for burst read is set by the device configura-
tion. The Wrap/No-wrap Burst Toggle can be used
to toggle the burst wrap operation.
The Wrap/No-wrap Burst Toggle instruction con-
sists of one write cycle giving the command 30h at
the address 00000h. Two consecutiveinstructions
are not recognised and another Instruction, for ex-
ample the Read Memory Array, must be given be-
fore another Wrap/No-wrap Burst Toggle will be
recognised.
de-
Overlay Block Read Enable/Disable Toggle
(OBT).
Read operations in the Overlay block can
be enabled or disabled using the Overlay Block
Read Enable/Disable Toggle instruction. This tog-
gle instruction consists of one write cycle giving
the command 06h at the address 00000h. Two
consecutive instructions are not recognised.
The Status Register bit 1 is set to ’1’ when the
Overlay block is enabled.
Table 9. Read Access to Overlay Block or Main Block
Table 10. Overlay Block Enable/Disable Bit (OBEB)
Note: 1. Toggle H-L-H for t
PLPH
minimum.
OBEB Status Bit
V
PP
OBS Status Bit
Read Access
1
In the range V
PP1
or V
PPH
1
Overlay Block
1
Out of the range
V
PP1
or V
PPH
0
Main Block
0
X
0
Main Block
1
Unknown
Not guaranteed
Unknown
OBEB Status Bit
Method
V
PP
Prior state of
OBEB
Next state of
OBEB
Toggle RP
(1)
In the range
V
PP1
or V
PPH
X
1
Out of the range
V
PP1
or V
PPH
X
0
Power-on-reset
In the range
V
PP1
or V
PPH
X
1
Out of the range
V
PP1
or V
PPH
X
0
Overlay Block Read Enable/Disable instruction OBT
0
1
1
0
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