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参数资料
| 型号： | M59DR032A |
| 厂商： | 意法半导体 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，双行，第低压闪存 |
| 文件页数： | 1/38页 |
| 文件大小： | 270K |
| 代理商： | M59DR032A |
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PRELIMINARY DATA
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M59DR032A
M59DR032B
32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory
s
SUPPLY VOLTAGE
–VDD = VDDQ = 1.65V to 2.2V: for Program,
Erase and Read
–VPP = 12V: optional Supply Voltage for fast
Program and Erase
s
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
s
PROGRAMMING TIME
– 10s by Word typical
– Double Word Programming Option
s
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 28 Mbit
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
–WP for Block Locking
s
COMMON FLASH INTERFACE (CFI)
s
64 bit SECURITY CODE
s
ERASE SUSPEND and RESUME MODES
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M59DR032A: A0h
– Device Code, M59DR032B: A1h
BGA
TSOP48 (N)
12 x 20mm
FBGA48 (ZB)
8 x 6 solder balls
Figure 1. Logic Diagram
AI02544B
21
A0-A20
W
DQ0-DQ15
VDD
M59DR032A
M59DR032B
E
VSS
16
G
RP
WP
VDDQ VPP
相关PDF资料 |
PDF描述 |
|---|---|
| M59DR032A100N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A120N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M59DR032A100N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A120N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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