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参数资料
| 型号： | M5M417400CJ-7S |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| 中文描述： | 快速页面模式16777216位（4194304 - Word的4位）动态随机存储器 |
| 文件页数： | 7/22页 |
| 文件大小： | 657K |
| 代理商： | M5M417400CJ-7S |
MITSUBISHI LSIs
M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
7
Fast-Page Mode Cycle (Read, Early Write, Read-Write, Read-Modify-Write Cycle)
(Note 23)
Note 23:
All previously specified timing requirements and switching characteristics are applicable to their respective fast page mode cycle.
t
RAS(min)
is specified as two cycles of CAS input are performed.
t
CP(max)
is specified as a reference point only.
24:
25:
CAS before RAS Refresh Cycle
(Note 26)
Note 26:
Eight or more CAS before RAS cycles instead of eight RAS cycles are necessary for proper operation of CAS before RAS refresh mode.
SELF REFRESH SPECIFICATIONS
Self refresh devices are denoted by “S” after speed item, like -5S/-6S/-7S. The other characteristics and requirements than the below are
same as normal devices.
ELECTRICAL CHARACTERISTICS
(Ta = 0 ~ 70°C, V
CC
= 5V ± 10%, V
SS
= 0V, unless otherwise noted) (Note 2)
Symbol
Parameter
Limits
Unit
M5M417400C-5,-5S
M5M417400C-6,-6S
M5M417400C-7,-7S
Min
Max
Min
Max
Min
Max
t
PC
Fast page mode read/write cycle time
35
40
45
ns
t
PRWC
Fast page mode read write/read modify write cycle time
76
85
95
ns
t
RAS
RAS low pulse width for read write cycle
(Note 24)
85
125000
100
125000
115
125000
ns
t
CP
CAS high pulse width
(Note 25)
8
12
10
15
10
15
ns
t
CPRH
RAS hold time after CAS precharge
30
35
40
ns
t
CPWD
Delay time, CAS precharge to W low
(Note 22)
53
60
65
ns
Symbol
Parameter
Limits
Unit
M5M417400C-5,-5S
M5M417400C-6,-6S
M5M417400C-7,-7S
Min
Max
Min
Max
Min
Max
t
CSR
CAS setup time before RAS low
10
10
10
ns
t
CHR
CAS hold time after RAS low
10
10
15
ns
t
RSR
Read setup time before RAS low
10
10
10
ns
t
RHR
Read hold time after RAS low
10
10
15
ns
Symbol
Parameter
Test conditions
Limits
Unit
Min
Typ
Max
I
CC8(AV)
Average supply current
from VCC
Slow-Refresh cycle
M5M417400C (S)
CAS before RAS refresh cycling
or RAS cycling & CAS
≤
0.2V
OE & WE
≤
0.2V
or OE & WE
≥
V
CC
- 0.2V
A
0
~ A
10
≤
0.2V
500
μ
A
(Note 5)
or A
0
~ A
10
≥
V
CC
- 0.2V
t
REF
= 128ms (2048 cycles)
output = OPEN
t
RAS
= t
RASmin.
~ 1
μ
s
I
CC9(AV)
Average supply current
from VCC
Slow-Refresh cycle
M5M417400C (S)
RAS = CAS
≤
0.2V
200
μ
A
(Note 5)
output = OPEN
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| M5M44260CJ-5 | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CJ | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-5 | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-5S | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-6 | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M5M417400CTP-5 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5S | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-6 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-6S | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-7 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
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