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参数资料
| 型号： | M5M465805BTP-5 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| 中文描述： | 江户模式67108864位（16777216 - Word的4位）动态随机存储器 |
| 文件页数： | 9/39页 |
| 文件大小： | 403K |
| 代理商： | M5M465805BTP-5 |
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MITSUBISHI
ELECTRIC
Jun. 1999
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
MITSUBISHI LSIs
(Rev. 1.1)
M5M467405/465405BJ,BTP -5,-6,-5S,-6S
M5M467805/465805BJ,BTP -5,-6,-5S,-6S
M5M465165BJ,BTP -5,-6,-5S,-6S
9
SWITCHING CHARACTERISTICS
(Ta=0 70 , Vcc=3.3 0.3V, Vss=0V, unless otherwise noted , see notes 6,14,15)
C
Parameter
Symbol
Limits
Unit
M5M46X405B-5,5S
M5M46X805B-5,5S
M5M465165B-5,5S
M5M46X405B-6,6S
M5M46X805B-6,6S
M5M465165B-6,6S
Access time from CAS
Access time from RAS
Column address access time
Access time from CAS precharge
t
CAC
t
RAC
t
AA
t
CPA
ns
ns
ns
ns
ns
15
60
30
33
13
50
25
28
t
OEA
t
OHC
t
OHR
(Note 7,8)
(Note 7,9)
(Note 7,10)
(Note 7,11)
(Note 7)
Access time from OE
Output hold time from CAS
Output hold time from RAS
15
13
Min
Max
Min
Max
5
5
t
CLZ
t
OEZ
(Note 12)
(Note 12)
(Note 12,13)
(Note 12,13)
Output disable time after OE high
Output disable time after W high
Output disable time after CAS high
Output disable time after RAS high
15
15
15
15
13
ns
ns
ns
t
WEZ
t
OFF
t
REZ
13
13
13
ns
ns
Output low impedance time from CAS low
(Note 7)
ns
ns
(Note 13)
5
5
5
5
Note 6: An initial pause of 500μs is required after power-up followed by a minimum of eight initialization cycles (any combination of cycles
containing RAS-only refresh or CAS before RAS refresh).
Note the RAS may be cycled during the initial pause. And any eight initialization cycles are required after prolonged periods
(greater than 64 ms) of RAS inactivity before proper device operation is achieved.
7: Measured with a load circuit equivalent to VOH=2.4V(IOH=-2mA) / VOL=0.4V(IOL=2mA) loads and 100pF. The reference levels for
measuring of output signals are VOH=2.0V and VOL=0.8V.
8: Assumes that t
RCD
t
RCD(max)
and t
ASC
t
ASC(max)
and
t
CP
t
CP(max).
9: Assumes that t
RCD
t
RCD(max)
and t
RAD
t
RAD(max).
If t
RCD
or
t
RAD
is greater than the maximum recommended value shown in this table,
t
RAC
will increase by amount that t
RCD
exceeds the value shown.
10: Assumes that t
RAD
t
RAD(max)
and t
ASC
t
ASC(max).
11: Assumes that t
CP
t
CP(max)
and t
ASC
t
ASC(max).
12: t
OEZ(max),
t
WEZ(max)
, t
OFF(max)
and
t
REZ(max)
defines the time at which the output achieves the high impedance state (I
OUT
10 A) and is
not reference to V
OH(min)
or
V
OL(max).
13: Output is disabled after both RAS and CAS go to high.
≥
≤
μ
≥
CAPACITANCE
(Ta=0 70 , Vcc=3.3 0.3V, Vss=0V, unless otherwise noted)
C
Limits
Typ
Min
Max
5
Unit
pF
pF
pF
pF
pF
pF
Input capacitance,address inputs
Input capacitance, OE input
Input capacitance, write control input
Input capacitance, RAS input
Input capacitance, CAS input
Input/Output capacitance, data ports
C
I (A)
C
I (OE)
C
I (W)
C
I (RAS)
C
I (CAS)
C
I / O
Symbol
Parameter
Test conditions
7
7
7
7
V
I
=Vss
f=1MH
Z
Vi=25mVrms
7
相关PDF资料 |
PDF描述 |
|---|---|
| M5M465805BTP-5S | EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| M5M465805BTP-6 | EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| M5M465805BTP-6S | EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| M5M467805BJ | EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| M5M467805BTP-5 | EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M5M465805BTP-5S | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| M5M465805BTP-6 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| M5M465805BTP-6S | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| M5M465805DJ | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
| M5M465805DTP-5 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
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