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参数资料
| 型号： | M5M5V32R16VP-10 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | 524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 524288位（32768字由16位）的CMOS静态RAM |
| 文件页数： | 3/8页 |
| 文件大小： | 74K |
| 代理商： | M5M5V32R16VP-10 |
M5M5V32R16J,TP-10,-12,-15
MITSUBISHI LSIs
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
Output timing reference levels V =1.5V, V =1.5V
Output loads
DC ELECTRICAL CHARACTERISTICS
(Ta=0 ~ 70 , Vcc=3.3V , unless otherwise noted)
CAPACITANCE
C
I
C
O
V
I
=GND,V
i
=25mVrms,f=1MHz
V
o
=GND,V
o
=25mVrms,f=1MHz
6
8
pF
pF
Input capacitance
Output capacitance
Note 1: Direction for current flowing into an IC is positive (no mark).
2: Typical value is Vcc=3.3V,Ta=25
3: C
I
,C
O
are periodically sampled and are not 100% tested.
Symbol
Parameter
Limit
Typ
Max
Min
Test Condition
Unit
(1) MEASUREMENT CONDITION
Input pulse levels V =3.0V, V =0.0V
Input rise and fall time 3ns
Input timing reference levels V =1.5V, V =1.5V
Fig1,Fig2
480
255
Vcc
DQ
Fig.2 Output load for t
en
, t
dis
5pF
( )
Fig.1 Output load
AC ELECTRICAL CHARACTERISTICS
(Ta=0 ~ 70 C
(Ta=0 ~ 70 , Vcc=3.3V , unless otherwise noted)
C
3
ABSOLUTE MAXIMUM RATINGS
1000
0 ~ 70
-10 ~ 85
-65 ~ 150
-2.0* ~ Vcc+0.5
-2.0* ~ Vcc
Power dissipation
Operating temperature
Storage temperature(bias)
Storage temperature
* Pulse width <
Parameter
Supply voltage
Input voltage
Output voltage
Symbol
Vcc
V
I
V
O
Pd
Topr
Tstg(bias)
Tstg
Conditions
With respect to GND
Ratings
-2.0* ~ 4.6
Ta=25 C
V
V
V
mW
C
C
C
Unit
VIH
VIL
VOH
VOL
II
IOZ
V
V
V
V
μA
Vcc+0.3
0.8
2.0
-0.3*
2.4
ICC1
ICC2
ICC3
mA
mA
mA
0.4
150
130
110
100
60
55
50
10
μA
IOH = - 4mA
IOL= 8mA
VI= 0 ~ Vcc
VI (/S)= VIH
VO= 0 ~ Vcc
VI (/S)= VIL
other inputs VIH or VIL
Output-open(duty 100%)
VI (/S)= Vcc>
other inputs VI<
or VI>
2
AC(10ns cycle)
AC(12ns cycle)
AC(15ns cycle)
DC
AC(10ns cycle)
AC(12ns cycle)
AC(15ns cycle)
1
Symbol
Parameter
Max
Typ
Limits
Min
Condition
Unit
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input current
Active supply current
(TTL level)
Stand-by supply current
(TTL level)
Output current in off-state
Stand-by current
(MOS level)
VI (/S)= VIH
* Pulse width <
90
DC
40
C
C
+10%
- 5%
0.1
( )
VL=1.5V
50
DQ
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| M5M5V32R16VP-12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM |
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| M5M5V408BFP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM |
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