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参数资料
| 型号： | M5M5V416BTP-10H |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 4194304位（262144字由16位）的CMOS静态RAM |
| 文件页数： | 3/11页 |
| 文件大小： | 110K |
| 代理商： | M5M5V416BTP-10H |
MITSUBISHI ELECTRIC
M5M5V416BTP,RT
revision-P04, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
pF
10
V
I
=GND, V
I
=25mVrms, f=1MHz
V
O
=
GND,V
O
=25mVrms, f=1MHz
C
I
C
O
Symbol
Parameter
Limits
Typ
Conditions
Units
μA
mA
μA
mA
V
Icc
1
Icc
2
Icc
4
V
IH
V
IL
V
OH1
V
OH2
V
OL
I
I
I
O
Icc
3
I
OH
= -0.5mA
I
OH
= -0.05mA
I
OL
=2mA
V
I
=0
~
Vcc
BC1 and BC2=VIH or S1=VIH or S2=VIH or OE=VIH, VI/O=0 ~ Vcc
Vcc+0.3V
0.6
2.2
-0.3 *
2.4
Vcc-0.5V
0.5
0.4
±1
±1
50
10
50
10
48
40
5
40
5
-
12
3.6
-HW, -HI
Max
Min
DC ELECTRICAL CHARACTERISTICS
+70°C
+40 ~ +70°C
+25 ~ +40°C
0 ~ +25°C
0.3
0.3
0.3
f= 10MHz
f= 1MHz
f= 10MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating
temperature
Storage temperature
V
mW
Conditions
Ta=25°C
Standard
W-version
I-version
700
- 20 ~ +85
- 40 ~ +85
- 65 ~ +150
Ratings
Vcc
V
I
V
O
P
d
T
a
T
stg
-0.5
*
~ +4.6
-0.5
*
~ Vcc + 0.5
0 ~ Vcc
Units
0 ~ +70
With respect to GND
With respect to GND
With respect to GND
f= 1MHz
+70 ~ +85°C
+70 ~ +85°C
-L, -LW, -LI
- 20 ~ +25°C
- 40 ~ +25°C
-H, -HW, -HI
-H
-HW
-HI
-LW, -LI
1
1.2
1.2
1.2
-
-
-
24
24
-
(-L, -H)
(-LW, -HW)
(-LI, -HI)
( Vcc=2.7 ~ 3.6V, unless otherwise noted)
High-level input voltage
Low-level input voltage
High-level output voltage 1
High-level output voltage 2
Low-level output voltage
Input leakage current
Output leakage current
Active supply current
( AC,MOS level )
( AC,TTL level )
Active supply current
Stand by supply current
( AC,MOS level )
( AC,TTL level )
Stand by supply current
Other inputs= 0 ~ Vcc
* -3.0V in case of AC (Pulse width <
Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical value is for Vcc=3.0V and Ta=25
°
C
CAPACITANCE
(Vcc=2.7 ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Conditions
Limits
Typ
Max
10
Min
Units
Input capacitance
Output capacitance
* -3.0V in case of AC (Pulse width <
BC1 and BC2<
other inputs 0.2V or >
Output - open (duty 100%)
<
BC1 and BC2=V
IL
, S=V
IL
,S2=V
IH
other pins =V
IH or
V
IL
Output - open (duty 100%)
<
Other inputs=0~Vcc
S1 Vcc - 0.2V,
other inputs = 0 ~ Vcc
< 2 >
S1 0.2V, S2 Vcc - 0.2V
<
< 1 >
< 3 >
BC1 and BC2 Vcc - 0.2V
BC1 and BC2=V
IH
or S1=V
IH
or S2=V
IL
°C
°C
S2 0.2V,
other inputs = 0 ~ Vcc
相关PDF资料 |
PDF描述 |
|---|---|
| M5M5V416BTP-10HI | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BTP-10HW | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BTP-10L | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BTP-10LI | Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85 |
| M5M5V416BTP-10LW | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M5M5V416BTP-10HI | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BTP-10HW | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BTP-10L | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BTP-10LI | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BTP-10LW | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
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