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参数资料
| 型号： | M5M5W816TP-70HI |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 8388608位（524288字由16位）的CMOS静态RAM |
| 文件页数： | 4/9页 |
| 文件大小： | 68K |
| 代理商： | M5M5W816TP-70HI |
MITSUBISHI ELECTRIC
M5M5W816TP-70HI, 85HI
2001.4.11 Ver. 2.0
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
Input rise time and fall time
Reference level
Output loads
2.7~3.0V
V
IH
=2.4V, V
IL
=0.4V
5ns
Transition is measured ±200mV from
steady state voltage.(for ten,tdis)
Fig.1,CL=30pF
CL=5pF (for ten,tdis)
AC ELECTRICAL CHARACTERISTICS
(1) TEST CONDITIONS
Supply voltage
Input pulse
(Vcc=2.7 ~3.0V, unless otherwise noted)
1TTL
CL
DQ
Fig.1 Output load
Including scope and
jig capacitance
t
CR
t
a
(A)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
a
(S)
t
a
(BC1)
t
a
(BC2)
t
a
(OE)
t
dis
(S)
t
dis
(BC1)
t
dis
(BC2)
t
dis
(OE)
t
en
(S)
t
en
(BC1,2)
t
en
(OE)
t
V
(A)
10
5
5
10
*5ns in case of using either BC1# or BC2#
35
25
25
25
25
70
70
70
70
70
4
t
su
(A-WH)
t
su
(BC1)
t
su
(BC2)
t
CW
t
w
(W)
t
su
(A)
t
su
(S)
t
su
(D)
t
h
(D)
t
rec
(W)
t
dis
(W)
t
dis
(OE)
t
en
(W)
t
en
(OE)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
25
25
70
55
0
65
65
65
65
35
0
0
5
5
Symbol
Parameter
Read cycle time
Address access time
Chip select 1 access time
Byte control 1 access time
Byte control 2 access time
Output enable access time
Output disable time after S# high
Output disable time after BC1# high
Output disable time after BC2# high
Output disable time after OE# high
Output enable time after S# low
Output enable time after BC1#,BC2# low
Output enable time after OE# low
Data valid time after address
Limits
Max
Min
Max
Min
85
Units
(2) READ CYCLE
(3) WRITE CYCLE
Max
Min
Max
Min
85
60
0
70
70
70
70
45
0
0
Limits
Units
Write cycle time
Write pulse width
Address setup time
Address setup time with respect to W#
Byte control 1 setup time
Byte control 2 setup time
Chip select setup time
Data setup time
Data hold time
Write recovery time
Output disable time from W# low
Output disable time from OE# high
Output enable time from W# high
Output enable time from OE# low
Symbol
Parameter
V
OH
=V
OL
=1.5V
10
5
5
10
45
30
30
30
30
85
85
85
85
85HI
70HI
85HI
70HI
30
30
5
5
相关PDF资料 |
PDF描述 |
|---|---|
| M5M5W816TP-85HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-70HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85H | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85L | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M5M5W816TP-70HI(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W816TP-70HIBT | 制造商:Renesas Electronics Corporation 功能描述:Memory,Low-pwr SRAM,8M bit,x16 |
| M5M5W816TP-85HI | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W816WG-55HI#ST | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W816WG-55HI(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
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