- 您现在的位置：买卖IC网 > PDF目录39443 > M6035C-E3/45 (VISHAY SEMICONDUCTORS) 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | M6035C-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 87K |
| 代理商： | M6035C-E3/45 |
New Product
M6035C thru M6060C
Vishay General Semiconductor
Document Number: 88965
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guarding for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
oring diodes, dc-to-dc converters or polarity protection
applications.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
30 A x 2
VRRM
35 V to 60 V
IFSM
320 A
VF
0.51 V, 0.56 V
TJ max.
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M6035C
M6045C
M6060C
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
60
V
Maximum average forward rectified current (Fig. 1)
total device
per diode
IF(AV)
60
30
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
320
A
Peak repetitive reverse current at tp = 2.0 s, 1 kHz per diode
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITION
SYMBOL
M6035C
M6045C
M6060C
UNIT
TYP.
MAX.
TYP.
MAX.
Instantaneous forward voltage per diode (1)
IF = 10 A
IF = 20 A
IF = 30 A
TJ = 25 °C
VF
0.42
0.49
0.55
-
0.61
0.43
0.52
0.59
-
0.65
V
IF = 10 A
IF = 20 A
IF = 30 A
TJ = 125 °C
0.31
0.42
0.51
-
0.56
0.33
0.47
0.56
-
0.61
Reverse current per diode (2)
VR
TJ = 25 °C
TJ = 125 °C
IR
140
106
700
175
180
140
700
175
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
1170
-
970
-
pF
相关PDF资料 |
PDF描述 |
|---|---|
| M6060P-E3/45 | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
| M66008FP | 12 I/O, PIA-GENERAL PURPOSE, PDSO24 |
| M66300FP | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| M66300P | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
| M68HC08AZ16 | 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PQFP64 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M6035P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| M6035P-E3/45 | 功能描述:肖特基二极管与整流器 60 Amp 35 Volt Dual Common Cath RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| M603LFXI | 功能描述:时钟发生器及支持产品 3PLL Program Clk Gen Portable Application RoHS:否 制造商:Silicon Labs 类型:Clock Generators 最大输入频率:14.318 MHz 最大输出频率:166 MHz 输出端数量:16 占空比 - 最大:55 % 工作电源电压:3.3 V 工作电源电流:1 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-56 |
| M603LFXIT | 功能描述:时钟发生器及支持产品 3PLL Program Clk Gen Portable Application RoHS:否 制造商:Silicon Labs 类型:Clock Generators 最大输入频率:14.318 MHz 最大输出频率:166 MHz 输出端数量:16 占空比 - 最大:55 % 工作电源电压:3.3 V 工作电源电流:1 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-56 |
| M6-0404-050-362-1.50-LL-P | 制造商:3M Electronic Products Division 功能描述:CABLE ASSY - Bulk |
发布紧急采购，3分钟左右您将得到回复。