参数资料
型号: M63812FP
元件分类: 小信号晶体管
英文描述: 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: 16P2N-A, 16 PIN
文件页数: 4/5页
文件大小: 67K
代理商: M63812FP
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63812GP/KP)
Duty cycle (%)
Collector
current
Ic
(mA)
Duty Cycle-Collector Characteristics
(M63812GP/KP)
Duty cycle (%)
Collector
current
Ic
(mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE(sat) (V)
Collector
current
Ic
(mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE(sat) (V)
Collector
current
Ic
(mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE(sat) (V)
Collector
current
Ic
(mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC
amplification
f
actor
h
FE
400
300
200
100
0
100
20
40
60
80
1~2
4
5
6
7
3
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
°C
400
300
200
100
0
100
20
40
60
80
1
2
3
4
56
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
°C
250
200
150
100
50
0
0.2
0.4
0.6
0.8
Ta = 25
°C
IB = 0.5mA
IB = 1mA
IB = 1.5mA
IB = 3mA
IB = 2mA
100
80
60
40
20
0
0.05
0.10
0.15
0.20
Ta = 25
°C
VI = 12V
VI = 16V
VI = 20V
VI = 24V
VI = 32V
VI = 28V
100
80
60
40
20
0
0.05
0.10
0.15
0.20
Ta = 85
°C
II = 2mA
Ta = 25
°C
Ta = –40
°C
100
101
102
101
102
103
23
5 7
2 3
5 7
2
3
5
7
2
3
5
7
103
23
5 7
VCE 10V
Ta = 25
°C
相关PDF资料
PDF描述
M63812GP 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
M63813FP 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
M63813P 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
M63816KP 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
M63816FP 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
M63812GP 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
M63812KP 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
M63812P 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
M63813FP 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
M63813GP 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE