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参数资料
| 型号： | M63815FP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 20P2N-A, 20 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 73K |
| 代理商： | M63815FP |
Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
Unit:
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5K
10K
Vz=7V
COM
Package type
18P4G(P)
20P2N-A(FP)
Package type
20P2E-A(KP)
IN7→
7
12
IN5→
5
14
INPUT
OUTPUT
IN4→
4
15
IN3→
3
IN2→
2
17
1
IN1
→
18
IN6→
613
→O1
→O2
→O3
→O4
→O5
→O6
→O7
16
IN8→
8
11
GND
9
→O8
10
→COM COMMOM
IN7→
8
13
IN5→
6
15
INPUT
OUTPUT
IN4→
5
16
IN3→ 4
IN2→
IN1→
IN6→
7
14
3
18
→O1
→O2
→O3
→O4
→O5
→O6
→O7
17
IN8→
9
12
GND
10
→O8
11
2
19
1
20
NC
→COM COMMOM
NC : No connection
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63815P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
DESCRIPTION
M63815P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q Three package configurations (P, FP, and KP)
q
Medium breakdown voltage (BVCEO
≥ 35V)
q Synchronizing current (IC(max) = 300mA)
q
With clamping diodes
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = –40 to +85
°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63815P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
CIRCUIT DIAGRAM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M63815KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63815P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63816FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63816KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63816P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
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