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参数资料
| 型号： | M63816FP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 20P2N-A, 20 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 73K |
| 代理商： | M63816FP |
Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63816P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63816FP)
Duty cycle (%)
Collector
current
Ic
(mA)
Duty Cycle-Collector Characteristics
(M63816FP)
Duty Cycle-Collector Characteristics
(M63816KP)
Duty cycle (%)
Collector
current
Ic
(mA)
400
300
200
100
0
100
20
40
60
80
1~3
5
6
7
8
4
400
300
200
100
0
100
20
40
60
80
1
2
3
4
5
67
8
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE(sat) (V)
Collector
current
Ic
(mA)
250
200
150
100
50
0
0.2
0.4
0.6
0.8
The collector current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
°C
The collector current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
°C
Duty Cycle-Collector Characteristics
(M63816KP)
Duty cycle (%)
Collector
current
Ic
(mA)
Duty cycle (%)
Collector
current
Ic
(mA)
400
300
200
100
0
100
20
40
60
80
1~2
4
5
6
8
7
3
400
300
200
100
0
100
20
40
60
80
1
2
3
4
5
67
8
The collector current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
°C
The collector current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
°C
Ta = 25
°C
IB = 3mA
IB = 2mA
IB = 1.5mA
IB = 1mA
IB = 0.5mA
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE(sat) (V)
Collector
current
Ic
(mA)
100
80
60
40
20
0
0.05
0.10
0.15
0.20
Ta = 25
°C
VI = 6V
VI = 7V
VI = 5V
VI = 4V
VI = 3V
VI = 2V
相关PDF资料 |
PDF描述 |
|---|---|
| M63816P | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63820FP | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63820KP | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63824KP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63824GP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M63816KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63816P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63817FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63817KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63817P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
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