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参数资料
| 型号： | M63816P |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 18P4G, 18 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 73K |
| 代理商： | M63816P |
Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
M63816P
M63816FP
M63816KP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63816P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V (BR) CEO
VIN(on)
VF
IR
hFE
V
A
—
35
—
2.4
—
50
—
3.5
1.2
—
0.2
0.8
4.2
2.0
10
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
Collector-emitter breakdown voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 10
A
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
VO
V
0
—
35
250
170
250
130
250
100
20
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
IC
VIN
Input voltage
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
M63816P
M63816FP
M63816KP
ns
—
125
250
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
°C
–0.5 ~ +35
300
–0.5 ~ +35
300
35
1.79
1.10
0.68
–40 ~ +85
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85
°C)
Output, H
Current per circuit output, L
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Ta = 25
°C, when mounted
on board
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M63817FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63817KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63817P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63820FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63820KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
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