- 您现在的位置：买卖IC网 > PDF目录95859 > M63820KP 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | M63820KP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 20P2E-A, 20 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 40K |
| 代理商： | M63820KP |
Sep. 2001
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are subject
to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63820FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
—
IC
≤ 400mA
Duty Cycle
FP : no more than 4%
KP : no more than 2%
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V
Parameter
0
Limits
min
typ
max
Symbol
Unit
VO
Output voltage
“H” input voltage
“L” input voltage
Duty Cycle
FP : no more than 15%
KP : no more than 6%
Collector current (Current per
1 circuit when 8 circuits are
coming on simultaneously)
IC
0
2.7
0
—
50
400
200
10
0.6
mA
V
VIH
VIL
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
—
15
350
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
—
1.2
1.0
0.9
1.5
1.4
—
2500
50
—
1000
V (BR) CEO
II
VF
IR
hFE
V
mA
V
A
—
1.6
1.3
1.1
2.4
2.0
100
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Collector-emitter breakdown voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 100
A
II = 500
A, IC = 350mA
II = 350
A, IC = 200mA
II = 250
A, IC = 100mA
VI = 3V
IF = 350mA
VR = 50V
VCE = 2V, IC = 350mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
INPUT
50%
OUTPUT
ton
toff
PG
INPUT
OUTPUT
VO
RL
OPEN
CL
50
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50
VI = 0 ~ 3V
(2)Input-output conditions : RL = 25
, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
Measured device
相关PDF资料 |
PDF描述 |
|---|---|
| M63824KP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63824GP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63826GP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63826FP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63826P | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M63823FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63823GP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63823P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63824GP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63824KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
发布紧急采购，3分钟左右您将得到回复。