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参数资料
| 型号： | M63850FP |
| 元件分类： | JFETs |
| 英文描述： | 1.5 A, 3 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/5页 |
| 文件大小： | 49K |
| 代理商： | M63850FP |
Apr. 2005
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63850P/FP
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
param
etric lim
its are
subject
to change.
Duty Cycle - Drain Current Characteristics
(M63850P)
1.0
0.5
1.5
2.0
0
1.0
0.5
1.5
2.0
0
Duty Cycle - Drain Current Characteristics
(M63850FP)
0
20406080
100
Duty Cycle - Drain Current Characteristics
(M63850P)
1.0
0.5
1.5
2.0
0
1.0
0.5
1.5
2.0
0
Duty Cycle - Drain Current Characteristics
(M63850FP)
Ambient temperature Ta (
°C)
M63850FP
0.744
0.520
M63850P
0
0.5
1.0
1.5
2.0
85
Input Characteristics
Input voltage VDD - VI (V)
Input
current
I
I(
A)
–80
–40
–120
–160
0
VDD = 5V
Ta = 85
°C
Ta = 25
°C
Ta = –40
°C
Thermal Derating Factor Characteristics
012345
0
20406080
100
0
20406080
100
0
20406080
100
0
255075
100
Duty cycle (%)
The drain current values represent the
current per circuit.
Repeated frequency
≥ 10Hz
The value in the circle represents the value of the
simultaneously-operated circuit.
Ta = 25
°C, VDD = 5V
The drain current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value in the circle represents
the value of the simultaneously-
operated circuit.
Ta = 85
°C, VDD = 5V
Duty cycle (%)
The drain current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value in the circle represents
the value of the simultaneously-
operated circuit.
Ta = 25
°C, VDD = 5V
Duty cycle (%)
The drain current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value in the circle represents
the value of the simultaneously-
operated circuit.
Ta = 85
°C, VDD = 5V
Power
dissipation
P
d
(W)
Drain
current
I
DS
(A)
Drain
current
I
DS
(A)
Drain
current
I
DS
(A)
Drain
current
I
DS
(A)
1
2
3
4
1
2
3
4
1
2
3
4
1
2
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
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