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参数资料
| 型号： | M68772 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | Silicon MOS FET Power Amplifier, 890-915MHz 13W FM Mobile |
| 中文描述： | 硅场效应晶体管功放，890 - 915MHz 13W调频手机 |
| 文件页数： | 1/2页 |
| 文件大小： | 245K |
| 代理商： | M68772 |
MITSUBISHI RF POWER MODULE
M68772
Silicon MOS FET Power Amplifier, 890-915MHz 13W FM Mobile
H 1 1
O U T L IN E D R A W IN G
P IN :
P
in
V
G G
: G A T E B IA S S U P P L Y
: R F IN P U T
V
D D
: D R A IN B IA S S U P P L Y
P
O
: R F O U T P U T
G N D : F IN
D im e n s io n s in m m
1
2
3
4
5
B L O C K D IA G R A M
4
5
3
2
1
8 .3 + /-1
4 3 .3 + /-1
2 1 .3 + /-1
5 0 .2 + /-1
5 1 .3 + /-1
6 0 .5 + /-1
5 7 .5 + /-0 .5
1
2
3
4
5
0 .4 5
+ /-0 .2
2 -R 1 .6
+ 0 .2
0
1
1
1
3
2
(
MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDD
SUPPLY VOLTAGE
VGG
GATE BIAS VOLTAGE
Pin
INPUT POWER
Po
OUTPUT POWER
Tc(OP)
OPERATION CASE TEMPERATURE f=890-915MHz,Z
G
=Z
L
=50 ohms
Tstg
STORAGE TEMPERATURE
Note:Above parameters are guaranteed independently.
CONDITIONS
RATINGS
17
5.5
10
20
-30 to +100
-40 to +100
UNIT
V
V
mW
W
deg. C
deg. C
V
GG
<5V,Z
G
=Z
L
=50 ohms
f=890-915MHz,Z
G
=Z
L
=50 ohms
f=890-915MHz,Z
G
=Z
L
=50 ohms
ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50
ohms
UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
MIN
890
13
35
MAX
915
f
FREQUENCY RANGE
OUTPUT POWER
Efficiency TOTAL EFFICIENCY
2fo
2nd HARMONIC
VSWR in INPUT VSWR
Switching
Time
-
STABILITY
MHz
W
%
dBc
-
micro
sec
-
Po
V
DD
=12.5V, V
GG
=4V, Pin=2mW
V
DD
=12.5V, Pin=2mW
Po=13W (V
GG
adjust)
-30
4
2.0
tr, tf
Po=13W(V
GG
adjust), V
GG
: ON/OFF
Vdd=12.5V, Pin=2mW
Z
G
=50 ohms, V
DD
=10-16V, Pin=1-4mW,
Po=0.1-20W (V
GG
Control), LOAD VSWR < 4:1
No parasitic
oscillation
No degradation
or destroy
-
LOAD VSWR TOLERANCE V
DD
=15.2V,Pin=2mW,Po=13W(V
GG
adjust)
Z
G
=50 ohms, LOAD VSWR=20:1
-
ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE .
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELETROSTATIC
SENSITIVE
DEVICES
φ
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